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IHW40T120

Description
Current Transformers Sense, Low Frequency 0.27/21mohm DCR
CategoryDiscrete semiconductor    The transistor   
File Size351KB,14 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IHW40T120 Overview

Current Transformers Sense, Low Frequency 0.27/21mohm DCR

IHW40T120 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
Parts packaging codeTO-247AC
package instructionGREEN, PLASTIC, TO-247, 3 PIN
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)75 A
Collector-emitter maximum voltage1200 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Gate emitter threshold voltage maximum6.5 V
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-247AC
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)270 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)700 ns
Nominal on time (ton)92 ns
IHW40T120
Soft Switching Series
Low Loss DuoPack : IGBT in
TrenchStop
®
and Fieldstop technology
with soft, fast recovery anti-parallel EmCon HE diode
C
Short circuit withstand time – 10µs
Designed for :
- Soft Switching Applications
- Induction Heating
TrenchStop
®
and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- easy parallel switching capability due to positive
temperature coefficient in
V
CE(sat)
Very soft, fast recovery anti-parallel EmCon
HE diode
Low EMI
Qualified according to JEDEC
1
for target applications
Application specific optimisation of inverse diode
•Pb-free
lead plating; RoHS compliant
G
E
PG-TO-247-3
Type
IHW40T120
V
CE
1200V
I
C
40A
V
CE(sat),Tj=25°C
1.8V
T
j,max
150°C
Marking
H40T120
Package
PG-TO247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T
C
= 25°C
T
C
= 100°C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area
V
CE
1200V,
T
j
150°C
Diode forward current
T
C
= 25°C
T
C
= 100°C
Diode pulsed current,
t
p
limited by
T
jmax
Diode surge non repetitive current,
t
p
limited by
T
jmax
T
C
= 25°C,
t
p
= 10ms, sine halfwave
T
C
= 25°C,
t
p
2.5µs, sine halfwave
T
C
= 100°C,
t
p
2.5µs, sine halfwave
Gate-emitter voltage
Short circuit withstand time
2)
V
GE
= 15V,
V
CC
1200V,
T
j
150°C
Power dissipation,
T
C
= 25°C
Operating junction temperature
Storage temperature
1
2)
Symbol
V
CE
I
C
Value
1200
75
40
Unit
V
A
I
Cpuls
-
I
F
105
105
31
19.8
I
Fpuls
I
FSM
47
A
78
200
160
±20
10
270
-40...+150
-55...+150
V
µs
W
°C
V
GE
t
SC
P
tot
T
j
T
stg
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.3 Sep 08
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