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STN1NK60Z

Description
16-bit Microcontrollers - MCU 16B Ultra-Low-Pwr MCU,92KB Flash
CategoryDiscrete semiconductor    The transistor   
File Size975KB,18 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
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STN1NK60Z Overview

16-bit Microcontrollers - MCU 16B Ultra-Low-Pwr MCU,92KB Flash

STN1NK60Z Parametric

Parameter NameAttribute value
Brand NameSTMicroelectronics
MakerSTMicroelectronics
Parts packaging codeSOT-223
package instructionSOT-223, 4 PIN
Contacts4
Reach Compliance Codenot_compliant
ECCN codeEAR99
Factory Lead Time8 weeks
Samacsys DescriptionSTN1NK60Z, N-channel MOSFET Transistor 0.3 A 600 V, 4-Pin SOT-223
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage600 V
Maximum drain current (Abs) (ID)0.25 A
Maximum drain current (ID)0.25 A
Maximum drain-source on-resistance15 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - annealed
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
STN1NK60Z,
STQ1NK60ZR
N-channel 600 V, 13
Ω
typ., 0.3 A Zener-protected SuperMESH™
Power MOSFETs in SOT-223 and TO-92 packages
Datasheet
-
production data
Features
Order codes
4
V
DS
600 V
R
DS(on)max
15
I
D
0.3 A
P
TOT
3.3 W
3W
STN1NK60Z
2
3
STQ1NK60ZR-AP
1
SOT-223
TO-92 (Ammopak)
100% avalanche tested
Extremely high dv/dt capability
Gate charge minimized
ESD improved capability
Zener-protected
Figure 1. Internal schematic diagram
D(2,4)
Applications
Switching applications
Description
G(1)
S(3)
AM01476v1
These devices are N-channel Zener-protected
Power MOSFETs developed using
STMicroelectronics' SuperMESH™ technology,
achieved through optimization of ST's well
established strip-based PowerMESH™ layout. In
addition to a significant reduction in on-
resistance, this device is designed to ensure a
high level of dv/dt capability for the most
demanding applications.
Table 1. Device summary
Order codes
STN1NK60Z
STQ1NK60ZR-AP
Marking
1NK60Z
1NK60ZR
Package
SOT-223
TO-92
Packaging
Tape and reel
Ammopak
July 2014
This is information on a product in full production.
DocID9509 Rev 14
1/18
www.st.com
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