LND150N3-G-P014 datasheet, PDF

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LND150N3-G-P014: DescriptionTrans MOSFET N-CH 500V 0.03A 3-Pin TO-92 Ammo; File Size316KB，7 Pages; ManufacturerMicrochip; Websitehttps://www.microchip.com; Environmental Compliance

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LND150N3-G-P014 Overview

Trans MOSFET N-CH 500V 0.03A 3-Pin TO-92 Ammo

LND150N3-G-P014 Parametric

Parameter Name	Attribute value
EU restricts the use of certain hazardous substances	Compliant
ECCN (US)	EAR99
Part Status	Active
Product Category	Power MOSFET
Configuration	Single
Channel Mode	Depletion
Channel Type	N
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	500
Maximum Gate Source Voltage (V)	±20
Maximum Continuous Drain Current (A)	0.03
Maximum Drain Source Resistance (MOhm)	1000000@0V
Typical Input Capacitance @ Vds (pF)	7.5@25V
Maximum Power Dissipation (mW)	740
Typical Fall Time (ns)	1300
Typical Rise Time (ns)	450
Typical Turn-Off Delay Time (ns)	100
Typical Turn-On Delay Time (ns)	90
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Packaging	Ammo
Supplier Package	TO-92
Pin Count	3
Standard Package Name	TO-92
Mounting	Through Hole
Package Height	5.33(Max)
Package Length	5.21(Max)
Package Width	4.19(Max)
PCB changed	3

User Manual

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Supertex inc.

N-Channel Depletion-Mode

DMOS FET

Features

►

Free from secondary breakdown

Low power drive requirement

Ease of paralleling

Excellent thermal stability

Integral source-drain diode

High input impedance and low C

ISS

ESD gate protection

LND150

General Description

The LND150 is a high voltage N-channel depletion mode

(normally-on) transistor utilizing Supertex’s lateral DMOS

technology. The gate is ESD protected.

The LND150 is ideal for high voltage applications in the

areas of normally-on switches, precision constant current

sources, voltage ramp generation and amplification.

Applications

►

Solid state relays

Normally-on switches

Converters

Power supply circuits

Constant current sources

Input protection circuits

Ordering Information

Part Number

LND150K1-G

LND150N3-G

LND150N3-G P002

LND150N3-G P003

LND150N3-G P005

LND150N3-G P013

LND150N3-G P014

LND150N8-G

Package Options

TO-236AB (SOT-23)

TO-92

TO-243AA (SOT-89)

Packing

3000/Reel

1000/Bag

2000/Reel

Product Summary

DSX

/BV

DGX

(V)

DS(ON)

(max)

DSS

(min)

500

1.0kΩ

1.0mA

Pin Configuration

SOURCE

DRAIN

-G denotes a lead (Pb)-free / RoHS compliant package

Absolute Maximum Ratings

Parameter

Drain-to-source

Drain-to-gate

Gate-to-source

Operating and storage temperature

TO-92

Value

DSX

DGX

±20V

-55

C to +150

DRAIN

GATE

SOURCE

GATE

SOURCE

DRAIN

SOURCE

GATE

TO-236AB (SOT-23)

TO-243AA (SOT-89)

Absolute Maximum Ratings are those values beyond which damage to the device may

occur. Functional operation under these conditions is not implied. Continuous operation

of the device at the absolute rating level may affect device reliability. All voltages are

referenced to device ground.

Product Marking

NDEW

W = Code for Week Sealed

= “Green” Packaging

SiLN

D 1 50

YYWW

YY = Year Sealed

WW = Week Sealed

= “Green” Packaging

LN1EW

W = Code for Week Sealed

= “Green” Packaging

TO-236AB (SOT-23)

Doc.# DSFP-LND150

C041114

TO-92

Packages may or may not include the following marks: Si or

TO-243AA (SOT-89)

Supertex inc.

www.supertex.com

LND150N3-G-P014 Related Products

	LND150N3-G-P014	LND150N8-G	LND150N3-G-P002	LND150N3-G	LND150N3-G-P003	LND150N3-G-P013	LND150K1-G
Description	Trans MOSFET N-CH 500V 0.03A 3-Pin TO-92 Ammo	Trans MOSFET N-CH 500V 0.03A 4-Pin(3+Tab) SOT-89 T/R	Trans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R	Trans MOSFET N-CH 500V 0.03A 3-Pin TO-92 Bag	Trans MOSFET N-CH 500V 0.03A 3-Pin TO-92 T/R	Trans MOSFET N-CH 500V 0.03A 3-Pin TO-92 Ammo	Trans MOSFET N-CH 500V 0.013A 3-Pin SOT-23 T/R
EU restricts the use of certain hazardous substances	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant	Compliant
ECCN (US)	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Part Status	Active	Active	Active	Active	Active	Active	Active
Product Category	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET
Configuration	Single	Single Dual Drain	Single	Single	Single	Single	Single
Channel Mode	Depletion	Depletion	Depletion	Depletion	Depletion	Depletion	Depletion
Channel Type	N	N	N	N	N	N	N
Number of Elements per Chip	1	1	1	1	1	1	1
Maximum Drain Source Voltage (V)	500	500	500	500	500	500	500
Maximum Gate Source Voltage (V)	±20	±20	±20	±20	±20	±20	±20
Maximum Continuous Drain Current (A)	0.03	0.03	0.03	0.03	0.03	0.03	0.013
Typical Input Capacitance @ Vds (pF)	7.5@25V	7.5@25V	7.5@25V	7.5@25V	7.5@25V	7.5@25V	7.5@25V
Maximum Power Dissipation (mW)	740	1600	740	740	740	740	360
Typical Fall Time (ns)	1300	1300	1300	1300	1300	1300	1300
Typical Rise Time (ns)	450	450	450	450	450	450	450
Typical Turn-Off Delay Time (ns)	100	100	100	100	100	100	100
Typical Turn-On Delay Time (ns)	90	90	90	90	90	90	90
Minimum Operating Temperature (°C)	-55	-55	-55	-55	-55	-55	-55
Maximum Operating Temperature (°C)	150	150	150	150	150	150	150
Packaging	Ammo	Tape and Reel	Tape and Reel	Bag	Tape and Reel	Ammo	Tape and Reel
Supplier Package	TO-92	SOT-89	TO-92	TO-92	TO-92	TO-92	SOT-23
Pin Count	3	4	3	3	3	3	3
Standard Package Name	TO-92	SOT	TO-92	TO-92	TO-92	TO-92	SOT-23
Mounting	Through Hole	Surface Mount	Through Hole	Through Hole	Through Hole	Through Hole	Surface Mount
Package Height	5.33(Max)	1.6(Max)	5.33(Max)	5.33(Max)	5.33(Max)	5.33(Max)	0.95
Package Length	5.21(Max)	4.6(Max)	5.21(Max)	5.21(Max)	5.21(Max)	5.21(Max)	2.9
Package Width	4.19(Max)	2.6(Max)	4.19(Max)	4.19(Max)	4.19(Max)	4.19(Max)	1.3
PCB changed	3	3	3	3	3	3	3
Maximum Drain Source Resistance (MOhm)	1000000@0V	1000000@0V	1000000@0V	1000000@0V	-	1000000@0V	1000000@0V
HTS	-	8541.29.00.95	-	8541.21.00.95	8541.21.00.95	-	8541.21.00.95

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