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FQP10N20C_Q

Description
MOSFET 200V N-Ch MOSFET
Categorysemiconductor    Discrete semiconductor   
File Size704KB,10 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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MOSFET 200V N-Ch MOSFET

FQP10N20C_Q Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerFairchild
RoHSNo
TechnologySi
Mounting StyleThrough Hole
Package / CaseTO-220-3
Number of Channels1 Channel
Transistor PolarityN-Channel
Vds - Drain-Source Breakdown Voltage200 V
Id - Continuous Drain Current9.5 A
Rds On - Drain-Source Resistance360 mOhms
Vgs - Gate-Source Voltage30 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle
Channel ModeEnhancement
PackagingTube
Fall Time72 ns
Forward Transconductance - Min0.55 S
Height16.3 mm
Length10.67 mm
Pd - Power Dissipation72 W
Rise Time92 ns
Factory Pack Quantity1000
Transistor Type1 N-Channel
TypeMOSFET
Typical Turn-Off Delay Time70 ns
Typical Turn-On Delay Time11 ns
Width4.7 mm
Unit Weight0.090478 oz
FQP10N20C / FQPF10N20C — N-Channel QFET
®
MOSFET
November 2013
FQP10N20C / FQPF10N20C
N-Channel QFET
®
MOSFET
200 V, 9.5 A, 360 mΩ
Features
• 9.5 A, 200 V, R
DS(on)
= 360 mΩ (Max.) @ V
GS
= 10 V,
I
D
= 4.75 A
• Low Gate Charge (Typ. 20 nC)
• Low Crss (Typ. 40.5 pF)
• 100% Avalanche Tested
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
active power factor correction (PFC), and electronic lamp
ballasts.
D
G
D
S
TO-220
G
D
S
G
TO-220F
S
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted.
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Drain Current
Drain Current
Gate to Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation
- Derate above 25
o
C
(T
C
= 25 C)
o
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Parameter
-Continuous (T
C
=
-Continuous (T
C
=
- Pulsed
25
o
C)
100
o
C)
(Note 1)
FQP10N20C
200
9.5
6.0
38
±
30
210
9.5
7.2
5.5
72
0.57
FQPF10N20C
9.5 *
6.0 *
38 *
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
38
0.3
-55 to +150
300
W
W/°C
°C
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
θJC
R
θJA
Parameter
Thermal Resistance, Junction to Case, Max
Thermal Resistance, Junction to Ambient, Max
FQP10N20C
1.74
62.5
FQPF10N20C
3.33
62.5
Unit
°C/W
°C/W
©2003 Fairchild Semiconductor Corporation
FQP10N20C / FQPF10N20C Rev. C1
1
www.fairchildsemi.com
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