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BSB165N15NZ3GXUMA1

Description
MOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3
CategoryDiscrete semiconductor    The transistor   
File Size1MB,13 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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MOSFET N-Ch 150V 45A CanPAK3 MZ OptiMOS 3

BSB165N15NZ3GXUMA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInfineon
package instructionCHIP CARRIER, R-MBCC-N3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time1 week
Avalanche Energy Efficiency Rating (Eas)440 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage150 V
Maximum drain current (Abs) (ID)45 A
Maximum drain current (ID)9 A
Maximum drain-source on-resistance0.0165 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-MBCC-N3
JESD-609 codee4
Humidity sensitivity level3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)78 W
Maximum pulsed drain current (IDM)180 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceSilver/Nickel (Ag/Ni)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
n-Channel Power MOSFET
OptiMOS™
BSB165N15NZ3 G
Data Sheet
2.2, 2011-07-20
Final
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