Ordering number:EN3154
FC11
N-Channel Junction Silicon FET
Low-Frequency General-Purpose Amp,
Differential Amp Applications
Features
· Adoption of FBET process.
· Composite type with 2 transistors contained in the
CP package currently in use, improving the mount-
ing efficiency greatly.
· The FC11 is formed with two chips, being equivalent
to the 2SK771, placed in one package.
· Excellent in the thermal equilibrium and pair capa-
bility and suitable for use in differential amp.
· Common source.
Package Dimensions
unit:mm
2070
[FC11]
Electrical Connection
G1:Gate1
G2:Gate2
D2:Drain2
SC:Source Common
D1:Drain1
SANYO:CP5
Specifications
Absolute Maximum Ratings
at Ta = 25˚C
Parameter
Drain-to-Source Voltage
Gate-to-Drain Voltage
Gate Current
Drain Current
Allowable Power Dissipation
Total Dissipation
Junction Temperature
Storage Temperature
Symbol
VDSX
VGDS
IG
ID
PD
PT
Tj
Tstg
1unit
Conditions
Ratings
40
–40
10
10
200
300
150
–55 to +150
Unit
V
V
mA
mA
mW
mW
˚C
˚C
Electrical Characteristics
at Ta = 25˚C
Parameter
Gate-to-Drain Breakdown Voltage
Gate Cutoff Current
Cutoff Voltage
Gate-to-Source Voltage Drop
Drain Current
Drain Current Ratio
Forward Transfer Admittance
Forward Transfer Admittance Ratio
Input Capacitacnce
Reverse Transfer Capacitance
Noise Figure
Ciss
Crss
NF
| Yfs |
Symbol
Conditions
Ratings
min
–40
–1.0
–0.3
1.2*
0.9
4.5
0.9
9.0
2.1
1.5
pF
pF
dB
9.0
mS
–0.9
–1.8
30
6.0*
typ
max
Unit
V
nA
V
mV
mA
V(BR)GDS IG=10µA, VDS=0
IGSS
VGS=–20V, VDS=0V
VGS(off)
∆V
GS
IDSS
VDS=10V, ID=1µA
|VGS large – VGS small |, VDS=10V, ID=1mA
VDS=10V, VGS=0V
VDS=10V, IDSS small/IDSS large
VDS=10V, VGS=0V, f=1kHz
VDS=10V, |Yfs|small / |Yfs|large
VDS=10V, VGS=0V, f=1MHz
VDS=10V, VGS=0V, f=1MHz
VDS=10V, Rg=1k
Ω
, ID=1mA, f=1kHz
Note*:The FC11 is classified by I
DSS
as follows (unit:mA)
1.2
D
3.0
2.5
E
6.0
Marking:11
I
DSS
rank:D,E
The Specifications shown above are for each individual
transistor.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
52098HA (KT)/7259TA, TS No.3154-1/3
FC11
No products described or contained herein are intended for use in surgical implants, life-support systems,
aerospace equipment, nuclear power control systems, vehicles, disaster/crime-prevention equipment and
the like, the failure of which may directly or indirectly cause injury, death or property loss.
Anyone purchasing any products described or contained herein for an above-mentioned use shall:
Accept full responsibility and indemnify and defend SANYO ELECTRIC CO., LTD., its affiliates,
subsidiaries and distributors and all their officers and employees, jointly and severally, against any
and all claims and litigation and all damages, cost and expenses associated with such use:
Not impose any responsibilty for any fault or negligence which may be cited in any such claim or
litigation on SANYO ELECTRIC CO., LTD., its affiliates, subsidiaries and distributors or any of
their officers and employees jointly or severally.
Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guarant-
eed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees
are made or implied regarding its use or any infringements of intellectual property rights or other rights of
third parties.
This catalog provides information as of May, 1998. Specifications and information herein are subject to
change without notice.
PS No.3154-3/3
Power technology
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