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BSP317P-L6327

Categorysemiconductor    Discrete semiconductor   
File Size618KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSP317P-L6327 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerInfineon
RoHSDetails
TechnologyGaN
Mounting StyleSMD/SMT
Package / CaseSOT-223-4
Number of Channels1 Channel
Transistor PolarityP-Channel
Vds - Drain-Source Breakdown Voltage- 250 V
Id - Continuous Drain Current- 430 mA
Rds On - Drain-Source Resistance4000 mOhms
Vgs - Gate-Source Voltage20 V
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationSingle Dual Drain
Channel ModeEnhancement
PackagingReel
PackagingCut Tape
Fall Time11.1 ns
Height1.6 mm
Length6.5 mm
Pd - Power Dissipation1.8 W
ProductMOSFET Small Signal
Rise Time11.1 ns
Factory Pack Quantity1000
Transistor Type1 P-Channel
Typical Turn-Off Delay Time254 ns
Typical Turn-On Delay Time5.7 ns
Width3.5 mm
Unit Weight0.003951 oz
BSP317P
SIPMOS
Small-Signal-Transistor
Feature
P-Channel
Enhancement mode
Logic Level
dv/dt rated
Drain
pin 2/4
Product Summary
V
DS
R
DS(on)
I
D
-250
4
-0.43
PG-SOT223
4
V
A
Qualified according to AEC Q101
Halogen­free according to IEC61249­2­21
Gate
pin1
Source
pin 3
2
1
3
VPS05163
Type
BSP317P
Package
PG-SOT223
Tape and Reel Information
H6327:
1000 pcs/reel
Marking
Packaging
BSP317P
Non dry
Maximum Ratings,
at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Value
Unit
Continuous drain current
T
A
=25°C
T
A
=70°C
I
D
-0.43
-0.34
A
Pulsed drain current
T
A
=25°C
I
D puls
-1.72
Reverse diode dv/dt
I
S
=-0.43A,
V
DS
=-200V, di/dt=-200A/µs,
T
jmax
=150°C
dv/dt
6
kV/µs
Gate source voltage
V
GS
±20
V
Power dissipation
T
A
=25°C
P
tot
1.8
W
Operating and storage temperature
T
j ,
T
stg
IEC climatic category; DIN IEC 68-1
ESD Class
-55... +150
55/150/56
°C
JESD22-A114-HBM
Class 1b
2.4
5
Rev.1.6
Page 1
2012­04­02
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