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BAV45

Description
Bipolar Transistors - BJT SILICON PICOAMPERE DIODE
CategoryDiscrete semiconductor    diode   
File Size709KB,4 Pages
ManufacturerCentral Semiconductor
Download Datasheet Parametric View All

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Bipolar Transistors - BJT SILICON PICOAMPERE DIODE

BAV45 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerCentral Semiconductor
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JEDEC-95 codeTO-18
JESD-30 codeO-MBCY-W2
JESD-609 codee0
Number of components1
Number of terminals2
Maximum operating temperature125 °C
Maximum output current0.05 A
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage35 V
Maximum reverse recovery time0.6 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
BAV45
w w w. c e n t r a l s e m i . c o m
SILICON
PICOAMPERE DIODE
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BAV45 is a silicon
picoampere diode, mounted in a hermetically sealed
metal case, designed for extremely low leakage
applications.
MARKING: FULL PART NUMBER
TO-18 (2-LEAD) CASE
MAXIMUM RATINGS:
(TA=25°C)
Peak Repetitive Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
Peak Repetitive Forward Current
Operating and Storage Junction Temperature
Thermal Resistance
ELECTRICAL
SYMBOL
IR
IR
IR
VF
CJ
trr
SYMBOL
VRRM
VR
IF
IFRM
TJ, Tstg
Θ
JA
UNITS
V
V
mA
mA
°C
°C/W
35
20
50
100
-65 to +125
500
CHARACTERISTICS:
(TA=25°C unless otherwise noted)
TEST CONDITIONS
MIN
VR=5.0V
VR=5.0V, TA=80°C
VR=20V
IF=10mA
VR=0, f=1.0MHz
IF=IR=10mA, Irr=1.0mA, RL=100Ω
MAX
5.0
250
10
1.0
1.3
600
UNITS
pA
pA
pA
V
pF
ns
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