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BD238G

Description
Bipolar Transistors - BJT 2A 80V 25W PNP
CategoryDiscrete semiconductor    The transistor   
File Size79KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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Bipolar Transistors - BJT 2A 80V 25W PNP

BD238G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
Parts packaging codeTO-225AA
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Manufacturer packaging code77-09
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)2 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)25
JEDEC-95 codeTO-225AA
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)260
Polarity/channel typePNP
Maximum power dissipation(Abs)25 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz
Base Number Matches1
BD237G (NPN),
BD234G, BD238G (PNP)
Plastic Medium Power
Bipolar Transistors
Designed for use in 5.0 to 10 W audio amplifiers and drivers
utilizing complementary or quasi complementary circuits.
Features
http://onsemi.com
High DC Current Gain
Epoxy Meets UL 94 V0 @ 0.125 in
These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating
Collector−Emitter Voltage
BD234G
DB237G, BD238G
Collector−Base Voltage
BD234G
DB237G, BD238G
Emitter−Base Voltage
Collector Current
Base Current
Total Device Dissipation
@ T
C
= 25_C
Operating and Storage Junction
Temperature Range
ESD − Human Body Model
ESD − Machine Model
Symbol
V
CEO
45
80
V
CBO
60
100
V
EBO
I
C
I
B
P
D
25
T
J
, T
stg
HBM
MM
– 55 to + 150
3B
C
_C
V
V
5.0
2.0
1.0
Vdc
Adc
Adc
W
Vdc
Value
Unit
Vdc
2.0 AMPERES
POWER TRANSISTORS
25 WATTS
PNP
COLLECTOR
2, 4
NPN
COLLECTOR
2, 4
3
BASE
1
EMITTER
3
BASE
1
EMITTER
TO−225
CASE 77−09
STYLE 1
1 2
3
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Case
Symbol
R
qJC
Max
5.0
Unit
_C/W
YWW
BD23xG
Y
= Year
WW
= Work Week
BD23x = Device Code
x = 4, 7 or 8
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the
package dimensions section on page 4 of this data
sheet.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
1
December, 2013 − Rev. 17
Publication Order Number:
BD237/D
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