analog switches designed for high performance switching of
analog signals. Combining low-power, high speed, low
on-resistance, and small package size, the DG2735,
DG2736 are ideal for portable and battery power
applications.
The DG2735, DG2736 have an operation range from 1.65 V
to 4.3 V single supply. The DG2735 has two separate control
pins with for the separated two SPDT switched. The DG2736
has an EN pin. All switches are at high impedance mode
when the EN is high.
The DG2735, DG2736 are guaranteed 1.65 V logic
compatible, allowing the easy interface with low voltage DSP
or MCU control logic and ideal for one cell Li-ion battery
direct power.
The switch conducts signals within power rails equally well in
both directions when on, and blocks up to the power supply
level when off. Break-before-make is guaranteed.
The DG2735, DG2736 are built on Vishay Siliconix’s sub
micron CMOS low voltage process technology and provides
greater than 300 mA latch-up protection, as tested per
JESD78.
As a committed partner to the community and the
environment, Vishay Siliconix manufactures this product with
lead (Pb)-free device terminations. DG2735, DG2736 are
offered in a miniQFN package. The miniQFN package has a
nickel-palladium-gold device termination and is represented
by the lead (Pb)-free “-E4” suffix. The nickel-palladium-gold
device terminations meet all JEDEC standards for reflow and
MSL ratings.
FEATURES
•
•
•
•
•
•
Low voltage operation (1.65 V to 4.3 V)
Low on-resistance - R
ON
: 0.6
at 2.7 V
Fast switching: t
ON
= 55 ns at 2.7 V
T
OFF
= 40 ns at 2.7 V
Latch-up current > 300 mA (JESD78)
Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
BENEFITS
•
•
•
•
Reduced power consumption
High accuracy
Reduce board space
TTL/1.65 V logic compatible
APPLICATIONS
•
•
•
•
•
•
Cellular phones
Speaker headset switching
Audio and video signal routing
PCMCIA cards
Battery operated systems
Portable media player Handheld test instruments
FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION
DG2735
miniQFN-10L
GND
NC2
DG2736
miniQFN-10L
NC2
GND
6
5
4
3
1
V+
Pin 1: LONG LEAD
Device Marking: Ax for DG2735
Device Marking:
Bx for DG2736
x = Date/Lot Traceability Code
2
NO1
NC1
IN1
COM1
7
IN2
COM2
NO2
8
9
10
1
V+
Pin 1: LONG LEAD
6
5
4
3
2
NO1
NC1
IN1
COM1
EN
COM2
NO2
8
9
10
7
(Top
View)
(Top
View)
Bx
Pin 1
Ax
Pin 1
or
Note:
Pin 1 has long lead
Document Number: 74420
S12-2498-Rev. D, 22-Oct-12
For technical questions, contact:
analogswitchtechsupport@vishay.com
www.vishay.com
1
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2735, DG2736
Vishay Siliconix
TRUTH TABLE
Logic
0
1
0
1
EN (DG2736 only)
1
1
0
0
NC1, 2
OFF
OFF
ON
OFF
NO1, 2
OFF
OFF
OFF
ON
ORDERING INFORMATION
Temp. Range
- 40 °C to 85°C
Package
miniQFN10
Part Number
DG2735DN-T1-E4
DG2736DN-T1-E4
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25 °C, unless otherwise noted)
Parameter
V+
IN, COM, NC, NO
a
Current (Any terminal except NO, NC or COM)
Continuous Current (NO, NC, or COM)
Peak Current (Pulsed at 1 ms, 10 % duty cycle)
Storage Temperature (D Suffix)
Power Dissipation (Packages)
b
miniQFN10
c
Reference to GND
Symbol
Limit
- 0.3 to 5
- 0.3 to (V+ + 0.3)
30
± 250
± 500
- 65 to 150
208
Unit
V
mA
°C
mW
Notes:
a. Signals on NC, NO, or COM or IN exceeding V+ will be clamped by internal diodes. Limit forward diode current to maximum current ratings.
b. All leads welded or soldered to PC board.
c. Derate 4 mW/C above 70 °C.
SPECIFICATIONS
(V+ = 3 V)
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %,V
IN
= 0.4 V or 1.65 V
e
R
DS(on)
V+ = 2.7 V, I
NO/NC
= 100 mA, V
COM
= 0.5 V
V+ = 2.7 V, I
NO/NC
= 100 mA, V
COM
= 1.5 V
V+ = 2.7 V, I
NO/NC
= 100 mA, V
COM
= 0.5 V
On-Resistance
R
DS(on)
V+ = 2.7 V, I
NO/NC
= 100 mA, V
COM
= 1.5 V
V+ = 4.3 V, I
NO/NC
= 100 mA, V
COM
= 0.9 V
V+ = 4.3 V, I
NO/NC
= 100 mA, V
COM
= 2.5 V
V+ = 4.3 V, I
NO/NC
= 100 mA, V
COM
= 0.9 V
V+ = 4.3 V, I
NO/NC
= 100 mA, V
COM
= 2.5 V
R
ON
Match
d
R
ON
V+ = 2.7 V, I
NO/NC
= 100 mA,
V
COM
= 0.5 V, 1.5 V
V+ = 4.3 V, I
NO/NC
= 100 mA,
V
COM
= 0.9 V, 2.5 V
V+ = 2.7 V, I
NO/NC
= 100 mA,
V
COM
= 0.5 V, 1.5 V
V+ = 4.3 V, V
NO/NC
= 0.3 V/4 V,
V
COM
= 4 V/0.3 V
Limits
- 40 °C to 85 °C
Temp.
a
Full
Room
Full
Room
Full
Min.
b
0
0.5
0.5
0.4
0.3
0.5
0.5
Typ.
c
Max.
b
V+
0.6
Unit
V
Parameter
Analog Switch
Analog Signal Range
d
Symbol
V
analog
Room
0.06
0.08
R
ON
resistance flatness
d
R
ON
flatness
I
NO/NC(off)
I
COM(off)
Room
Room
Full
Room
Full
-2
- 10
-2
- 10
-5
- 20
0.15
2
10
2
10
5
20
nA
Switch Off Leakage
Current
Channel-On Leakage
Current
I
COM(on)
V+ = 4.3 V, V
NO/NC
= V
COM
= 4 V/0.3 V
Room
Full
Document Number: 74420
S12-2498-Rev. D, 22-Oct-12
For technical questions, contact:
analogswitchtechsupport@vishay.com
www.vishay.com
2
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2735, DG2736
Vishay Siliconix
SPECIFICATIONS
(V+ = 3 V)
Test Conditions
Unless Otherwise Specified
V+ = 3 V, ± 10 %,V
IN
= 0.4 V or 1.65 V
e
Limits
- 40 °C to 85 °C
Temp.
a
Full
Full
Full
V
IN
= 0 or V+
Full
Room
Room
Full
V+ = 3.6 V, V
NO
, V
NC
= 1.5 V, R
L
= 50
,
C
L
= 35 pF
Room
Full
Room
Full
Room
Full
R
L
= 50
,
C
L
= 5 pF, f = 100 kHz
R
L
= 50
,
C
L
= 5 pF
C
NO(off)
C
NC(off)
C
NO(on)
C
NC(on)
V+
I+
V
IN
= 0 or V+
Full
1.65
V
IN
= 0 V, or V+, f = 1 MHz
Room
Room
Room
- 70
- 70
50
55
55
130
130
4.3
1
V
µA
pF
35
50
35
-1
1
5
50
78
80
58
60
78
80
58
60
dB
MHz
ns
6
1
Min.
b
1.65
0.4
Typ.
c
Max.
b
Unit
Parameter
Digital Control
Input High Voltage
Input Low Voltage
Input Capacitance
Input Current
Dynamic Characteristics
Break-Before-Make Time
e
Turn-On Time
e
Turn-Off Time
e
Enable Turn-On Time
e
DG2736 (EN)
Enable Turn-Off Time
e
DG2736 (EN)
Off-Isolation
Crosstalk
d
3dB bandwith
d
NO, NC Off Capacitance
d
Channel On Capacitance
Power Supply
Power Supply Range
Power Supply Current
d
d
Symbol
V
INH
V
INL
C
IN
I
INL
or I
INH
t
BBM
t
ON
t
OFF
t
ON(EN)
t
OFF(EN)
O
IRR
X
TALK
V
pF
µA
Notes:
a. Room = 25 °C, Full = as determined by the operating suffix.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
c. Typical values are for design aid only, not guaranteed nor subject to production testing.
d. Guarantee by design, not subjected to production test.
e. V
IN
= input voltage to perform proper function.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
Document Number: 74420
S12-2498-Rev. D, 22-Oct-12
For technical questions, contact:
analogswitchtechsupport@vishay.com
www.vishay.com
3
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2735, DG2736
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
2.4
2.2
2.0
R
O
N
- On-Resistance (Ω)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0 3.5
4.0 4.5
5.0
V
COM
- Analog
Voltage
(V)
V+
= 4.3
V
V+
= 2.7
V
V+
= 3.0
V V+
= 3.6
V
V+
= 1.8
V
V+
= 1.5
V
T
A
= 25 °C
I
NO/NC
= 100 mA
R
O
N
- On-Resistance (Ω)
0.6
+
85
°C
0.5
0.4
+ 25 °C
0.3
- 40 °C
0.2
0.1
V+
= 2.7
V,
I
S
= 100 mA
NO
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
V
COM
- Analog
Voltage
(V)
R
ON
vs. V
COM
and Supply Voltage
0.6
+
85
°C
0.5
R
O
N
- On-Resistance (Ω)
R
O
N
- On-Resistance (Ω)
+ 25 °C
0.4
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0
0.5
1
1.5
2
2.5
3
0.0
R
ON
vs. Analog Voltage and Temperature
0.3
- 40 °C
0.2
V+
= 2.7
V,
I
S
= 100 mA
NC
+
85
°C
+ 25 °C
V+
= 4.3
V,
I
S
= 100 mA
NO
0.5
1.0
1.5
2.0
- 40 °C
0.1
0.0
V
COM
- Analog
Voltage
(V)
2.5
3.0
3.5
4.0
4.5
V
COM
- Analog
Voltage
(V)
R
ON
vs. Analog Voltage and Temperature
1.0
0.9
0.8
R
O
N
- On-Resistance (Ω)
I+ - S
u
pply C
u
rrent (pA)
0.7
0.6
0.5
+
85
°C
0.4
0.3
0.2
0.1
0.0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
V
COM
- Analog
Voltage
(V)
V+
= 4.3
V,
I
S
= 100 mA
NC
1
- 60
- 40 °C
+ 25 °C
10 000
100 000
R
ON
vs. Analog Voltage and Temperature
V+
= 4.3
V
1000
100
10
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
R
ON
vs. Analog Voltage and Temperature
Supply Current vs. Temperature
Document Number: 74420
S12-2498-Rev. D, 22-Oct-12
For technical questions, contact:
analogswitchtechsupport@vishay.com
www.vishay.com
4
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
DG2735, DG2736
Vishay Siliconix
TYPICAL CHARACTERISTICS
(T
A
= 25 °C, unless otherwise noted)
100 000
V+
= 4.3
V
10 000
Leakage C
u
rrent (pA)
t
ON
, t
OFF
- Switching Time (ns)
20
25
t
ON
V+
= 2.7
V
1000
I
COM(on)
I
COM(off)
100
I
NC(off)
15
t
ON
V+
= 4.3
V
10
t
OFF
V+
= 4.3
V
10
5
t
OFF
V+
= 2.7
V
1
- 60
- 40
- 20
0
20
40
60
80
100
0
- 60
- 40
- 20
0
20
40
60
80
100
Temperature (°C)
Temperature (°C)
Leakage Current vs. Temperature
5
4
3
2
1
0
-1
-2
-3
-4
-5
0.0
Switching Time vs. Temperature
10
LOSS
0
- 10
I
COM(on)
LOSS, OIRR, X
TALK
(dB)
Leakage C
u
rrent (pA)
- 20
- 30
OIRR
- 40
- 50
- 60
- 70
XTALK
I
COM(off)
I
NO(off)
DG2735A
V+
= 3.0
V
R
L
= 50
Ω
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
-
80
300 K
1 MHz
10 MHz
Frequency (Hz)
100 MHz
1 GHz
V
COM
,
V
NO
,
V
NC
- Analog
Voltage
(V)
Leakage vs. Analog Voltage
Insertion Loss, Off-Isolation
Crosstalk vs. Frequency
2.0
V
T
- S
w
itching Threshold (
V
)
1.5
1.0
0.5
0.0
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V+
- Supply
Voltage
(V)
Switching Threshold vs. Supply Voltage
Document Number: 74420
S12-2498-Rev. D, 22-Oct-12
For technical questions, contact:
analogswitchtechsupport@vishay.com
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT