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FDS6692A N-Channel PowerTrench
®
MOSFET
January 2010
FDS6692A
N-Channel PowerTrench
®
MOSFET
30V, 9A, 11.5mΩ
Features
R
DS(ON)
= 11.5mΩ, V
GS
= 10V, I
D
= 9A
R
DS(ON)
= 14.5mΩ, V
GS
= 4.5V, I
D
= 8.2A
High performance trench technology for extremely low
R
DS(ON)
Low gate charge
High power and current handling capability
RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to
improve the overall efficiency of DC/DC converters using
either synchronous or conventional switching PWM
controllers. It has been optimized for low gate charge, low
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Microcontroller MCU
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