TrenchT2
TM
HiperFET
TM
Power MOSFET
IXFA180N10T2
IXFP180N10T2
V
DSS
I
D25
R
DS(on)
= 100V
= 180A
6m
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Rectifier
TO-263AB (IXFA)
G
S
Symbol
V
DSS
V
DGR
V
GSS
V
GSM
I
D25
I
LRMS
I
DM
I
A
E
AS
dv/dt
P
D
T
J
T
JM
T
stg
T
L
T
SOLD
M
d
Weight
Test Conditions
T
J
= 25C to 175C
T
J
= 25C to 175C, R
GS
= 1M
Continuous
Transient
T
C
= 25C (Chip Capability)
Lead Current Limit, RMS
T
C
= 25C, Pulse Width Limited by T
JM
T
C
= 25C
T
C
= 25C
I
S
I
DM
, V
DD
V
DSS
, T
J
175°C
T
C
= 25C
Maximum Ratings
100
100
20
30
180
120
450
90
750
15
480
-55 ... +175
175
-55 ... +175
V
V
V
V
A
A
A
A
mJ
V/ns
W
C
C
C
°C
°C
Nm/lb.in
g
g
Features
D (Tab)
TO-220AB (IXFP)
G
DS
D (Tab)
G = Gate
S = Source
D
= Drain
Tab = Drain
Maximum Lead Temperature for Soldering
1.6 mm (0.062in.) from Case for 10s
Mounting Torque (TO-220)
TO-263
TO-220
300
260
1.13 / 10
2.5
3.0
International Standard Packages
High Current Handling Capability
Fast Intrinsic Rectifier
Avalanche Rated
Low R
DS(on)
Advantages
Easy to Mount
Space Savings
High Power Density
Symbol
Test Conditions
(T
J
= 25C Unless Otherwise Specified)
BV
DSS
V
GS(th)
I
GSS
I
DSS
R
DS(on)
V
GS
= 0V, I
D
= 250A
V
DS
= V
GS
, I
D
= 250A
V
GS
=
20V, V
DS
= 0V
V
DS
= V
DSS
, V
GS
= 0V
T
J
= 150C
V
GS
= 10V, I
D
= 50A, Notes 1, 2
Characteristic Values
Min. Typ.
Max.
100
2.0
4.0
V
V
Applications
100
nA
10
A
750
A
6 m
Synchronous Recification
DC-DC Converters
Battery Chargers
Switch-Mode and Resonant-Mode
Power Supplies
DC Choppers
AC Motor Drives
Uninterruptible Power Supplies
High Speed Power Switching
Applications
© 2014 IXYS CORPORATION, All Rights Reserved
DS100266D(10/14)
IXFA180N10T2
IXFP180N10T2
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g(on)
Q
gs
Q
gd
R
thJC
R
thCH
TO-220
0.50
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
Resistive Switching Times
V
GS
= 10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 2
(External)
V
GS
= 0V, V
DS
= 25V, f = 1MHz
V
DS
= 10V, I
D
= 60A, Note 1
Characteristic Values
Min. Typ.
Max.
50
88
10.5
945
100
21
37
34
13
185
48
52
S
nF
pF
pF
ns
ns
ns
ns
nC
nC
nC
0.31
C/W
C/W
A2
b2
TO-263 Outline
E
C2
L1
D
1
2
3
b
L2
A
E1
D1
A1
H
4
L3
c
0
e
0.43 [11.0]
e
0.34 [8.7]
0.66 [16.6]
1 - Gate
2,4 - Drain
3 - Source
0.20 [5.0]
0.12 [3.0]
0.10 [2.5]
0.06 [1.6]
Source-Drain Diode
Symbol
Test Conditions
(T
J
= 25C, Unless Otherwise Specified)
I
S
I
SM
V
SD
t
rr
I
RM
Q
RM
V
GS
= 0V
Repetitive, Pulse Width Limited by T
JM
I
F
= 100A, V
GS
= 0V, Note 1
I
F
= 0.5 • I
D25
, V
GS
= 0V
-di/dt = 100A/s
V
R
= 0.5 • V
DSS
66
5.8
190
Characteristic Values
Min. Typ.
Max.
180
720
1.3
A
A
V
Q
TO-220 Outline
E
oP
A
A1
H1
D2
ns
A
nC
D
D1
E1
EJECTOR
PIN
A2
L1
L
Notes: 1.
Pulse test, t
300s, duty cycle, d
2%.
2. On through-hole package, R
DS(on)
Kelvin test contact
location must be 5mm or less from the package body.
e
e1
c
3X b
3X b2
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXFA180N10T2
IXFP180N10T2
Fig. 1. Output Characteristics @ T
J
= 25ºC
180
160
140
120
V
GS
= 15V
10V
9V
8V
7V
350
300
250
V
GS
= 15V
10V
8V
Fig. 2. Extended Output Characteristics @ T
J
= 25ºC
I
D
- Amperes
I
D
- Amperes
7V
200
150
6V
100
100
80
60
40
20
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
6V
50
5V
0
0
1
2
5V
3
4
5
6
7
8
V
DS
- Volts
V
DS
- Volts
Fig. 3. Output Characteristics @ T
J
= 150ºC
180
160
140
120
100
80
60
40
20
0
0
0.5
1
1.5
2
2.5
3
5V
6V
V
GS
= 15V
10V
9V
8V
3.0
2.6
7V
2.2
1.8
1.4
1.0
0.6
0.2
-50
Fig. 4. R
DS(on)
Normalized to I
D
= 90A Value vs.
Junction Temperature
V
GS
= 10V
R
DS(on)
- Normalized
I
D
= 180A
I
D
= 90A
I
D
- Amperes
-25
0
25
50
75
100
125
150
175
V
DS
- Volts
T
J
- Degrees Centigrade
3.4
3.0
Fig. 5. R
DS(on)
Normalized to I
D
= 90A Value vs.
Drain Current
V
GS
= 10V
15V
- - - - -
T
J
= 175ºC
Fig. 6. Drain Current vs. Case Temperature
140
External Lead Current Limit
120
100
R
DS(on)
- Normalized
2.6
I
D
- Amperes
T
J
= 25ºC
2.2
1.8
1.4
1.0
0.6
0
40
80
120
160
200
240
280
320
360
80
60
40
20
0
-50
-25
0
25
50
75
100
125
150
175
I
D
- Amperes
T
C
- Degrees Centigrade
© 2014 IXYS CORPORATION, All Rights Reserved
IXFA180N10T2
IXFP180N10T2
Fig. 7. Input Admittance
200
180
160
120
140
120
100
80
60
40
40
20
0
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
20
0
0
20
40
60
80
100
120
140
160
180
200
T
J
= 150ºC
25ºC
- 40ºC
25ºC
150ºC
160
T
J
= - 40ºC
140
Fig. 8. Transconductance
g
f s
- Siemens
I
D
- Amperes
100
80
60
V
GS
- Volts
I
D
- Amperes
Fig. 9. Forward Voltage Drop of Intrinsic Diode
300
10
9
250
8
7
V
DS
= 50V
I
D
= 90A
I
G
= 10mA
Fig. 10. Gate Charge
I
S
- Amperes
200
150
V
GS
- Volts
T
J
= 25ºC
6
5
4
3
2
1
100
T
J
= 150ºC
50
0
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
0
0
20
40
60
80
100
120
140
160
180
V
SD
- Volts
Q
G
- NanoCoulombs
100,000
Fig. 11. Capacitance
f
= 1 MHz
1000
Fig. 12. Forward-Bias Safe Operating Area
100µs
R
DS(on)
Limit
10ms
1ms
25µs
Capacitance - PicoFarads
10,000
C iss
100
1,000
C oss
I
D
- Amperes
100ms
DC
10
T
J
= 175ºC
T
C
= 25ºC
Single Pulse
1
100
Crss
10
0
5
10
15
20
25
30
35
40
1
10
100
V
DS
- Volts
V
DS
- Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXFA180N10T2
IXFP180N10T2
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
R
G
= 2Ω , V
GS
= 10V
V
DS
= 50V
50
45
40
55
50
45
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
R
G
= 2Ω , V
GS
= 10V
V
DS
= 50V
T
J
= 25ºC
t
r
- Nanoseconds
t
r
- Nanoseconds
35
30
25
I
20
15
10
5
0
25
35
45
55
65
75
85
95
105
115
125
I
D
D
40
35
30
25
20
15
10
5
90
100
110
120
130
= 90A
= 45A
T
J
= 125ºC
140
150
160
170
180
T
J
- Degrees Centigrade
I
D
- Amperes
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
20
19
18
17
16
15
14
13
2
3
4
5
6
7
8
9
10
11
12
13
14
15
26
19
18
17
24
23
22
21
20
19
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
46
t
r
V
DS
= 50V
t
d(on)
- - - - -
T
J
= 125ºC, V
GS
= 10V
25
t
f
V
DS
= 50V
t
d(off)
- - - - -
44
42
R
G
= 2Ω, V
GS
= 10V
t
d(on)
- Nanoseconds
t
d(off)
- Nanoseconds
t
r
- Nanoseconds
t
f
- Nanoseconds
16
15
14
13
12
11
10
25
35
45
55
65
75
85
95
105
115
I
D
= 180A
I
D
= 90A
40
38
36
34
32
30
28
125
I
D
= 90A, 180A
R
G
- Ohms
T
J
- Degrees Centigrade
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
17
50
17
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
46
t
f
16
V
DS
= 50V
t
d(off)
- - - - -
46
16
R
G
= 2Ω, V
GS
= 10V
t
f
V
DS
= 50V
t
d(off)
- - - - -
44
T
J
= 125ºC, V
GS
= 10V
t
d(off)
- Nanoseconds
t
d(off)
- Nanoseconds
t
f
- Nanoseconds
15
T
J
= 125ºC
42
t
f
- Nanoseconds
15
42
14
38
14
I
D
= 180A, 90A
13
40
13
T
J
= 25ºC
34
12
30
38
11
90
100
110
120
130
140
150
160
170
26
180
12
2
3
4
5
6
7
8
9
10
11
12
13
14
15
36
I
D
- Amperes
R
G
- Ohms
© 2014 IXYS CORPORATION, All Rights Reserved
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