Teccor
®
brand Thyristors
Silicon Controlled Rectifiers
Sx02xS EV Series 1.5 Amp Sensitive SCR
Description
New 1.5Amp sensitive gate SCR series offers high static
dv/dt with low turn off time (tq) through small die planar
construction design. All SCR’s junctions are glass-
passivated to ensure long term reliability and parametric
stability.
Features
mount packages
capability > 15Amps
Value
1.5
400 to 600
200
Unit
A
V
μA
time (tq) < 35 μsec.
microprocessor interface
Main Features
Symbol
I
T(RMS)
V
DRM
/ V
RRM
I
GT
(V
DRM
/ V
RRM
)
capability — up to 600V
Schematic Symbol
A
Applications
The Sx02xS EV series is specifically designed for Gas
Ignition applications that require high pulse surge current
capability.
G
K
Absolute Maximum Ratings
Symbol
I
T(RMS)
I
T(AV)
RMS on-state current
(full sine wave)
Average on-state current
Non repetitive surge peak on-state current
(Single cycle, T
J
initial = 25°C)
Parameter
TO-92
SOT-223
TO-92
SOT-223
TO-92
SOT-223
t
p
= 10 ms
t
p
= 8.3 ms
di/dt
I
GM
P
G(AV)
T
stg
T
J
Critical rate of rise of on-state current IG = 10mA
Peak gate current
Average gate power dissipation
Storage junction temperature range
Operating junction temperature range
TO-92
SOT-223
t
p
= 10 μs
T
C
= 65°C
T
L
= 95°C
T
C
= 65°C
T
C
= 95°C
F = 50 Hz
F = 60 Hz
F = 50 Hz
F = 60 Hz
T
J
= 125°C
T
J
= 125°C
T
J
= 125°C
Value
1.5
0.95
12.5
A
15.0
0.78
A
2
s
0.93
50
1.0
0.1
-40 to 150
°C
-40 to 125
A/μs
A
W
Unit
A
A
I
TSM
I
2
t
I
2
t Value for fusing
Sx02xS EV Series 1.5 Amp Sensitive SCRs
190
Power Thyristor Databook
www.littelfuse.com
©2008 Littelfuse
Teccor
®
brand Thyristors
Silicon Controlled Rectifiers
Electrical Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
I
GT
V
GT
V
GRM
I
H
Description
DC Gate Trigger Current
DC Gate Trigger Voltage
Peak Reverse Gate Voltage
Holding Current
Critical Rate-of-Rise of
Off-State Voltage
Test Conditions
V
D
= 12V
R
L
= 60 Ω
I
RG
= 10μA
R
GK
= 1 kΩ
T
J
= 125°C
V
D
= V
DRM
/ V
RRM
Exponential Waveform
R
GK
= 1 kΩ
T
J
= 125°C @ 600 V
R
GK
= 1 kΩ
I
G
= 10mA
PW = 15μsec
I
T
= 3.0A (pk)
Sx02xS
Min
15
—
5
—
Max
200
0.8
—
5
Unit
μA
V
V
mA
(dv/dt)s
25
—
V/μs
t
q
t
gt
Turn-Off Time
—
35
μs
Turn-On Time
—
3
μs
Static Characteristics
(T
J
= 25°C, unless otherwise specified)
Symbol
V
TM
Description
Peak On-State Voltage
Test Conditions
I
TM
= 3.0A (pk)
T
J
= 25°C @ V
D
= V
DRM
R
GK
= 1 kΩ
T
J
= 125°C @ V
D
= V
DRM
R
GK
= 1 kΩ
Value
Min
—
—
—
Max
1.70
5
500
Unit
V
μA
μA
I
DRM
Off-State Current, Peak Repetitive
Thermal Resistances
Symbol
R
th(j-c)
Description
Junction to case (AC)
Test Conditions
I
T
= 1.5A
(RMS)1
TO-92
SOT-223
TO-92
SOT-223
Value
50
°C/W
25
160
°C/W
60
Unit
R
th(j-a)
1
Junction to ambient
I
T
= 1.5A
(RMS)1
60Hz AC resistive load condition, 100% conduction.
www.littelfuse.com
©2008 Littelfuse
191
Power Thyristor Databook
Sx02xS EV Series 1.5 Amp Sensitive SCRs
Teccor
®
brand Thyristors
Silicon Controlled Rectifiers
Figure 1: Normalized DC Gate Trigger Current
vs. Junction Temperature
2.5
Figure 2: Normalized DC Holding Current
vs. Junction Temperature
2.0
Normalized Gate: Trigger Current
I
GT
@ T
j
/ I
GT
@ 25ºC
2.0
1.5
1.5
1.0
1.0
0.5
0.5
0.0
0.0
-40
-25
-10
+5
+20
+35
+50
+65
+80
+95 +110 +125
-40
-25
-10
+5
+20
+35
+50
+65
+80
+95
+110
+125
Junction Temperature (T
J
) °C
Figure 3: Normalized DC Gate Trigger Voltage
vs. Junction Temperature
Figure 4: Power Dissipation (Typical)
vs. RMS On-State Current
1.5
Average Power Dissipation, P
D
(Watts)
1.5
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180
o
Normalized Gate: Trigger Voltage
(V
GT
@ T
j
/ V
GT
@ 25ºC)
1.0
1.0
0.5
0.5
-40
-25
-10
+5
+20
+35
+50
+65
+80
+95 +110 +125
0.0
0.0
0.5
1.0
1.5
Junction Temperature (T
J
) °C
RMS On-state Current [I
T (RMS)
] (Amps)
Figure 5: Maximum Allowable Case Temperature
vs. On-State Current
130
Max Allowable Case Temperature, T
C
(Celsius)
120
SOT-223
110
100
TO-92
90
80
70
60
50
0.0
0.5
1.0
1.5
CURRENT WAVEFORM: Sinusoidal
LOAD: Resistive or Inductive
CONDUCTION ANGLE: 180
o
CASE TEMPERATURE: Measured as
shown on dimensional drawings
RMS On-state Current [I
T (RMS)
] (Amps)
Sx02xS EV Series 1.5 Amp Sensitive SCRs
192
Power Thyristor Databook
www.littelfuse.com
©2008 Littelfuse
Teccor
®
brand Thyristors
Silicon Controlled Rectifiers
Figure 6: Surge Peak On-State Current vs. Number of Cycles
Peak Surge (Non-repetitive) On-State Current
(I
TSM
) – Amps.
Supply Frequency: 60Hz Sinusoidal
Load: Resistive
RMS On-State Current [I
T(RMS)
]: Max Rated Value at
Specific Case Temperature
Notes:
1. Gate control may be lost during and immediately
following surge current interval.
2. Overload may not be repeated until junction
temperature has returned to steady-state rated value.
Dev
ices
20
15
12
10
9
8
7
6
5
4
3
2
1.5 A
1
1
2
3
4
5 6 7 8 9 10
20
30
40
60 80 100
200
300 400 600
1000
Surge Current Duration – Full Cycle
Soldering Parameters
Reflow Condition
- Temperature Min (T
s(min)
)
Pre Heat
- Temperature Max (T
s(max)
)
- Time (min to max) (t
s
)
Average ramp up rate (Liquidus Temp)
(T
L
) to peak
T
S(max)
to T
L
- Ramp-up Rate
Reflow
- Temperature (T
L
) (Liquidus)
- Time (min to max) (t
s
)
Pb – Free assembly
150°C
200°C
60 – 180 secs
5°C/second max
5°C/second max
217°C
60 – 150 seconds
260
+0/-5
°C
20 – 40 seconds
5°C/second max
8 minutes Max.
280°C
Peak Temperature (T
P
)
Time within
5°C
of actual peak
Temperature (t
p
)
Ramp-down Rate
Time 25°C to peak Temperature (T
P
)
Do not exceed
www.littelfuse.com
©2008 Littelfuse
193
Power Thyristor Databook
Sx02xS EV Series 1.5 Amp Sensitive SCRs
Teccor
®
brand Thyristors
Silicon Controlled Rectifiers
Physical Specifications
Terminal Finish
100% Matte Tin-plated.
UL recognized epoxy meeting flammability
classification 94V-0.
Copper Alloy
Environmental Specifications
Test
AC Blocking
Specifications and Conditions
MIL-STD-750, M-1040, Cond A Applied
Peak AC voltage @ 125°C for 1008 hours
MIL-STD-750, M-1051,
100 cycles; -40°C to +150°C; 15-min
dwell-time
EIA / JEDEC, JESD22-A101
1008 hours; 320V - DC: 85°C; 85%
rel humidity
MIL-STD-750, M-1031,
1008 hours; 150°C
1008 hours; -40°C
MIL-STD-750, M-1056
10 cycles; 0°C to 100°C; 5-min dwell-
time at each temperature; 10 sec (max)
transfer time between temperature
EIA / JEDEC, JESD22-A102
168 hours (121°C at 2 ATMs) and
100% R/H
MIL-STD-750 Method 2031
ANSI/J-STD-002, category 3, Test A
MIL-STD-750, M-2036 Cond E
Body
Temperature Cycling
Lead Material
Temperature/
Humidity
Design Considerations
Careful selection of the correct device for the application’s
operating parameters and environment will go a long way
toward extending the operating life of the thyristor. Good
design practice should limit the maximum continuous
current through the main terminals to 75% of the device
rating. Other ways to ensure long life for a power discrete
semiconductor are proper heat sinking and selection of
voltage ratings for worst case conditions. Overheating,
overvoltage (including dv/dt), and surge currents are
the main killers of semiconductors. Correct mounting,
soldering, and forming of the leads also help protect
against component damage.
High Temp Storage
Low-Temp Storage
Thermal Shock
Autoclave
Resistance to
Solder Heat
Solderability
Lead Bend
Dimensions — TO-92
Inches
Dimensions
Min
A
0.175
0.170
C
D
E
F
G
H
I
J
0.500
0.135
0.125
0.080
0.016
0.045
0.095
0.015
Typ
—
—
—
0.165
—
0.095
—
0.050
0.100
—
Max
0.205
0.210
—
—
0.165
0.105
0.021
0.055
0.105
0.020
Min
4.450
4.320
12.700
3.430
3.180
2.040
0.407
1.150
2.420
0.380
Typ
—
—
—
4.190
—
2.400
—
1.270
2.540
—
Max
5.200
5.330
—
—
4.190
2.660
0.533
1.390
2.660
0.500
Millimeters
Sx02xS EV Series 1.5 Amp Sensitive SCRs
194
Power Thyristor Databook
www.littelfuse.com
©2008 Littelfuse
京公网安备 11010802033920号
EEWORLD
