ZXMN3G32DN8
30V SO8 dual N-channel enhancement mode MOSFET
Summary
V
(BR)DSS
30
R
DS(on)
(Ω)
0.028 @ V
GS
= 10V
0.045 @ V
GS
= 4.5V
I
D
(A)
7.1
5.6
Description
This new generation Trench MOSFET from Zetex features low on-
resistance and fast switching speed.
Features
•
•
•
Low on-resistance
4.5V gate drive capability
Fast switching bullet
D1
D2
G1
S1
G2
S2
Applications
•
•
•
•
DC-DC Converters
Power management functions
Motor Control
Backlighting
S1
G1
S2
Tape width
(mm)
12
Quantity
per reel
500
D1
D1
D2
D2
Ordering information
DEVICE
ZXMN3G32DN8TA
Reel size
(inches)
7
G2
Device marking
ZXMN
3G32D
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
1
www.zetex.com
ZXMN3G32DN8
Absolute maximum ratings
Parameter
Drain source voltage
Gate source voltage
Continous Drain Current @ V
GS
=10; T
A
=25°C
(b)
@ V
GS
=10; T
A
=70°C
(b)
@ V
GS
=10; T
A
=25°C
(a)
Pulsed drain current
(c)
Continuous source current (body diode)
(b)
Pulsed source current (body diode)
(c)
Power dissipation at T
A
=25°C
(a)(d)
Linear derating factor
Power dissipation at T
A
=25°C
(a)(e)
Linear derating factor
Power dissipation at T
A
=25°C
(b)(d)
Linear derating factor
Operating and storage temperature range
T
j
, T
stg
P
D
P
D
Symbol
V
DSS
V
GS
I
D
Limit
30
±20
7.1
5.7
5.5
33.6
3.1
33.6
1.25
10
1.8
14
2.1
17
-55 to 150
Unit
V
V
A
A
A
A
A
A
W
mW/°C
W
mW/°C
W
mW/°C
°C
I
DM
I
S
I
SM
P
D
Thermal resistance
Parameter
Junction to ambient
(a)(d)
Junction to ambient
(a)(e)
Junction to ambient
(b)(d)
Junction to lead
(f)
Symbol
R
JA
R
JA
R
JA
R
JL
Limit
100
70
60
51
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air
conditions.
(b) For a device surface mounted on FR4 PCB measured at t
≤
10 sec.
(c) Repetitive rating - 25mm x 25mm FR4 PCB, D=0.02, pulse width 300µs - pulse width limited by maximum junction
temperature.
(d) For a dual device with one active die.
(e) For a device with two active die running at equal power.
(f) Thermal resistance from junction to solder-point (at end of drain lead).
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
2
www.zetex.com
ZXMN3G32DN8
Thermal characteristics
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
3
www.zetex.com
ZXMN3G32DN8
Electrical characteristics (at T
amb
= 25°C unless otherwise stated)
Parameter
Static
Drain-Source Breakdown
Voltage
Zero Gate Voltage Drain
Current
Gate-Body Leakage
Gate-Source Threshold
Voltage
Static Drain-Source
On-State Resistance
(*)
Forward
Transconductance
(*)(†)
Dynamic
(†)
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Switching
(‡)(†)
Turn-On-Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate Drain Charge
Source-drain diode
Diode Forward Voltage
(*)
V
SD
0.68
1.2
V
T
j
=25°C, I
S
= 1.7A,
V
GS
=0V
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
2.5
3.1
14
9.7
10.5
1.86
2.3
ns
ns
ns
ns
nC
nC
nC
V
DS
= 15V, V
GS
= 10V
I
D
= 6A
V
DD
= 15V, I
D
= 1A
R
G
≅
6.0Ω, V
GS
=10V
C
iss
C
oss
C
rss
472
178
65
pF
pF
pF
V
DS
= 15V, V
GS
=0V
f=1MHz
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
12
1.0
30
0.5
100
3.0
0.028
0.045
V
µA
nA
V
Ω
Ω
S
I
D
= 250µA, V
GS
=0V
V
DS
= 30V, V
GS
=0V
V
GS
=±20V, V
DS
=0V
I
D
= 250µA, V
DS
=V
GS
V
GS
= 10V, I
D
= 6.0A
V
GS
= 4.5V, I
D
= 4.9A
V
DS
= 15V, I
D
= 6.0A
Symbol
Min.
Typ.
Max.
Unit
Conditions
NOTES:
(*) Measured under pulsed conditions. Pulse width
≤
300µs; duty cycle
≤2%.
(†) For design aid only, not subject to production testing
(‡) Switching characteristics are independent of operating junction temperature.
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
4
www.zetex.com
ZXMN3G32DN8
Typical characteristics
Issue 1 - January 2008
© Zetex Semiconductors plc 2008
5
www.zetex.com
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