DSEC 60-02A
HiPerFRED
TM
Epitaxial Diode
with common cathode and soft recovery
I
FAV
= 2x30 A
V
RRM
= 200 V
t
rr
= 25 ns
A
V
RSM
V
200
V
RRM
V
200
Type
A
C
TO-247 AD
DSEC 60-02A
A
C
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
I
FRMS
I
FAVM
I
FSM
E
AS
I
AR
T
VJ
T
VJM
T
stg
P
tot
M
d
F
C
Weight
Conditions
T
C
= 145°C; rectangular, d = 0.5
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
T
VJ
= 25°C; non-repetitive
I
AS
= 3 A; L = 180 µH
V
A
= 1.5·V
R
typ.; f = 10 kHz; repetitive
Maximum Ratings
70
30
325
1.2
0.3
A
A
A
Features
•
•
•
•
•
•
•
International standard package
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low I
RM
-values
Soft recovery behaviour
Epoxy meets UL 94V-0
-o
-55...+175
175
-55...+150
u
mJ
A
°C
°C
°C
W
Nm
N
g
µA
µA
V
V
K/W
K/W
ns
4
A
typical
s
mounting torque
mounting force with clip
e
0.25
25
T
C
= 25°C
165
0.8...1.2
20...120
6
Symbol
I
R
①
Conditions
h
a
Characteristic Values
typ.
max.
10
200
0.95
1.20
0.9
V
F
②
R
thJC
R
thCH
t
rr
I
RM
I
F
= 30 A;
I
F
= 1 A; -di/dt = 200 A/µs;
V
R
= 30 V; T
VJ
= 25°C
V
R
= 100 V; I
F
= 50 A;
-di
F
/dt = 100 A/µs; T
VJ
= 100°C
Pulse test:
①
Pulse Width = 5 ms, Duty Cycle < 2.0 %
②
Pulse Width = 300
µs,
Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified.
p
V
R
= V
RRM
; T
VJ
= 25°C
V
R
= V
RRM
; T
VJ
= 150°C
T
VJ
= 150°C
T
VJ
= 25°C
Recommended replacement:
DPF60C200HB
DPF80C200HB
502
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
t
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low I
RM
reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
1-2
DSEC 60-02A
A
60
I
F
40
T
VJ
= 150°C
T
VJ
= 100°C
T
VJ
= 25°C
500
nC
400
I
RM
Q
r
300
I
F
= 60 A
I
F
= 30 A
I
F
= 15 A
200
T
VJ
= 100°C
V
R
= 100 V
25
A
20
T
VJ
= 100°C
V
R
= 100 V
I
F
= 60 A
15
I
F
= 30 A
I
F
= 15 A
10
20
100
5
0
0.0
0.5
1.0
V
F
V
1.5
0
100
0
A/µs 1000
-di
F
/dt
0
200
400
600 A/µs 1000
800
-di
F
/dt
Fig.1 Forward current I
F
vs.
forward voltage drop V
F
1.8
1.6
1.4
K
f
1.2
1.0
0.8
I
RM
0.6
0.4
0.2
0
40
80
120 °C 160
T
VJ
Q
r
30
60
ns
t
rr
50
Fig.2 Reverse recovery charge
Q
rr
versus -di
F
/dt
16
V
14
12
10
8
6
Fig.3 Peak reverse current
I
RM
versus -di
F
/d
3.8
T
VJ
= 100°C
V
R
= 100 V
I
F
= 30 A
µs
3.7
3.6
3.5
3.4
3.3
V
FR
4
3.2
600 A/µs 1000
800
di
F
/dt
t
fr
T
VJ
= 100°C
V
R
= 100 V
40
I
F
= 60A
I
F
= 30A
I
F
= 15A
e
-o
u
t
V
FR
0
200
t
fr
s
20
0
200
400
600
-di
F
/dt
800
A/µs 1000
h
Fig.4 Dynamic parameters
Q
rr
; I
RM
versus T
vj
30
µJ
25
20
E
rec
15
10
T
VJ
= 100°C
V
R
= 100 V
I
F
= 30 A
a
400
Fig.5 Reverse recovery time
t
rr
versus -di
F
/dt
Fig.6 Peak forward voltage V
FR
&
forw. recov. time t
fr
vs. -di
F
/dt
NOTE: Fig. 2 to Fig. 6 shows typical values
1
K/W
0.1
Z
thJC
0.01
p
Constants for Z
thJC
calculation:
i
R
thi
(K/W)
0.465
0.179
0.256
t
i
(s)
0.005
0.0003
0.04
DSEC 60-02A
0.001
5
0
0
200
400
600 A/µs 1000
800
-diF/dt
0.0001
0.00001
1
2
3
0.0001
0.001
0.01
0.1
t
s
1
Fig. 7 Recovery energy
E
rec
versus -di
F
/dt
Fig.8 Transient thermal resistance junction to case
502
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
2-2
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