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TC8220K6-G

CategoryDiscrete semiconductor    The transistor   
File Size541KB,6 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
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TC8220K6-G Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerMicrochip
package instruction4 X 4 MM, 1 MM HEIGHT, GREEN, DFN-12
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time13 weeks
Samacsys DescriptionMOSFET 2PR N- & PCH ENHANCE MODE MOSFET
Other featuresLOGIC LEVEL COMPATIBLE, LOW THRESHOLD
ConfigurationSEPARATE, 4 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
Minimum drain-source breakdown voltage200 V
Maximum drain-source on-resistance7 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-N12
JESD-609 codee4
Number of components4
Number of terminals12
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL AND P-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formNO LEAD
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Supertex inc.
Two Pair, N- and P-Channel
Enhancement-Mode MOSFET
Features
High voltage Vertical DMOS technology
Integrated gate-to-source resistor
Integrated gate-to-source Zener diode
Low threshold, Low on-resistance
Low input & output capacitance
Fast switching speeds
TC8220
General Description
Electrically isolated N- and P-MOSFET pairs
Applications
High voltage pulsers
Amplifiers
Buffers
Piezoelectric transducer drivers
General purpose line drivers
Logic level interfaces
The Supertex TC8220 consists of two pairs of high voltage, low
threshold N-channel and P-channel MOSFETs in a 12-Lead DFN
package. All MOSFETs have integrated the gate-to-source resistors
and gate-to-source Zener diode clamps which are desired for high
voltage pulser applications. The complimentary, high-speed, high
voltage, gate-clamped N and P-channel MOSFET pairs utilize an
advanced vertical DMOS structure and Supertex’s well-proven
silicon-gate manufacturing process. This combination produces a
device with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices.
Characteristic of all MOS structures, these devices are free from
thermal runaway and thermally induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a wide range
of switching and amplifying applications where very low threshold
voltage, high breakdown voltage, high input impedance, low input
and output capacitance, and fast switching speeds are desired.
Typical Application Circuit
+10V
0.1µF
OE
INA
INB
VDD
VH
OUTA
OUTB
V
NN
-100V
1.0µF
0.47µF
V
PP
+100V
1.0µF
ENAB
+PULSE
1.8 to 5.0V
Logic Imputs
-PULSE
DAMP
INC
IND
GND
VSS
OUTC
OUTD
VL
Supertex
MD1822
10nF
Supertex
TC8220
Doc.# DSFP-TC8220
B080713
Supertex inc.
www.supertex.com
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