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BSP149E6327

Description
MOSFET N-Ch 200V 660mA SOT-223-3
CategoryDiscrete semiconductor    The transistor   
File Size397KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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BSP149E6327 Overview

MOSFET N-Ch 200V 660mA SOT-223-3

BSP149E6327 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInfineon
Parts packaging codeSOT-223
package instructionSOT-223, 4 PIN
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage200 V
Maximum drain current (Abs) (ID)0.66 A
Maximum drain current (ID)0.48 A
Maximum drain-source on-resistance3.5 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals4
Operating modeDEPLETION MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1.8 W
Maximum pulsed drain current (IDM)1.44 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1
BSP149
SIPMOS Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
• Available with
V
GS(th)
indicator on reel
• Pb-free lead plating; RoHS compliant
• Qualified according to AEC Q101
• Halogen-free according to IEC61249-2-21
®
Product Summary
V
DS
R
DS(on),max
I
DSS,min
200
3.5
0.14
V
Ω
A
PG-SOT223
Type
Type
BSP149
BSP149
BSP149
BSP149
Package
Package
PG-SOT223
PG-SOT223
PG-SOT223
PG-SOT223
Tape and Reel Information
Tape and Reel Information
H6327: 1000 pcs/reel
H6327: 1000 pcs/reel
H6906: 1000 pcs/reel
H6906: 1000 pcs/reel
sorted in
V
GS(th)
bands1)
Marking
Marking
BSP149
BSP149
BSP149
BSP149
Packaging
Packaging
Non dry
Non dry
Non dry
Non dry
Maximum ratings
at
T
j
=25 °C unless otherwise specified
ratings,
°C,
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
I
D,pulse
T
A
=25 °C
I
D
=0.66 A,
V
DS
=160 V,
di /dt =200 A/µs,
T
j,max
=150 °C
Value
0.66
0.53
2.6
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
ESD Class
(JESD22-A114-HBM)
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
1)
V
GS
±20
1B (>500,<600)
V
P
tot
T
j
,
T
stg
T
A
=25 °C
1.8
-55 ... 150
55/150/56
W
°C
see table on next page and diagram 11
Rev. 2.1
page 1
2012-11-28

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