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BC557C

Description
Bipolar Transistors - BJT 100mA 50V PNP
CategoryDiscrete semiconductor    The transistor   
File Size78KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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Bipolar Transistors - BJT 100mA 50V PNP

BC557C Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeTO-92
package instructionCASE 29-11, TO-226, 3 PIN
Contacts3
Manufacturer packaging code29-11
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)420
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)240
Polarity/channel typePNP
Maximum power dissipation(Abs)0.625 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)320 MHz
BC556B, BC557A, B, C,
BC558B
Amplifier Transistors
PNP Silicon
Features
http://onsemi.com
Pb−Free Packages are Available*
COLLECTOR
1
MAXIMUM RATINGS
Rating
Collector - Emitter Voltage
BC556
BC557
BC558
Collector - Base Voltage
BC556
BC557
BC558
Emitter - Base Voltage
Collector Current − Continuous
Collector Current
− Peak
Base Current − Peak
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
V
EBO
I
C
I
CM
I
BM
P
D
P
D
T
J
, T
stg
V
CBO
−80
−50
−30
−5.0
−100
−200
−200
625
5.0
1.5
12
−55 to +150
Vdc
mAdc
mAdc
mW
mW/°C
W
mW/°C
°C
Symbol
V
CEO
−65
−45
−30
Vdc
Value
Unit
Vdc
2
BASE
3
EMITTER
TO−92
CASE 29
STYLE 17
12
1
3
STRAIGHT LEAD
BULK PACK
3
BENT LEAD
TAPE & REEL
AMMO PACK
2
MARKING DIAGRAM
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction−to−Ambient
Thermal Resistance, Junction−to−Case
Symbol
R
qJA
R
qJC
Max
200
83.3
Unit
°C/W
°C/W
BC
55xx
AYWW
G
G
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
xx
= 6B, 7A, 7B, 7C, or 8B
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2007
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
1
March, 2007 − Rev. 3
Publication Order Number:
BC556B/D
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