7WB3306
2-Bit Bus Switch
The 7WB3306 is an advanced high−speed low−power 2−bit bus
switch in ultra−small footprints.
Features
•
•
•
•
•
•
•
High Speed: t
PD
= 0.25 ns (Max) @ V
CC
= 4.5 V
3
W
Switch Connection Between 2 Ports
Power Down Protection Provided on Inputs
Zero Bounce
TTL−Compatible Control Inputs
Ultra−Small Pb−Free Packages
These are Pb−Free Devices
http://onsemi.com
MARKING
DIAGRAMS
8
1
UDFN8
MU SUFFIX
CASE 517AJ
8
Micro8]
DM SUFFIX
CASE 846A
1
8
TSSOP8
DT SUFFIX
CASE 948AL
1
UDFN8
1.95 x 1.0
CASE 517CA
A
Y
W
M
G
AAA
YWW-
A
G
3306
AYWG
G
ANM
G
XM
1
= Assembly Location
= Year
= Work Week
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
©
Semiconductor Components Industries, LLC, 2014
1
October, 2014 − Rev. 3
Publication Order Number:
7WB3306/D
7WB3306
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
I/O
I
IK
I
OK
I
O
DC Supply Voltage
Control Pin Input Voltage
Switch Input / Output Voltage
Control Pin DC Input Diode Current
Switch I/O Port DC Diode Current
ON−State Switch Current
Continuous Current Through V
CC
or GND
I
CC
I
GND
T
STG
T
L
T
J
q
JA
DC Supply Current Per Supply Pin
DC Ground Current per Ground Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature Under Bias
Thermal Resistance
UDFN8 (Note 1)
Micro8
TSSOP8
UDFN8
Micro8
TSSOP8
V
IN
< GND
V
I/O
< GND
Parameter
Value
−0.5 to +7.0
−0.5 to +7.0
−0.5 to +7.0
−50
−50
$128
$150
$150
$150
−65 to +150
260
150
111
392
150
1127
319
833
Level 1
UL 94 V−0 @ 0.125 in
> 1.5
>4
>4
$100
kV
kV
kV
mA
Unit
V
V
V
mA
mA
mA
mA
mA
mA
°C
°C
°C
°C/W
P
D
Power Dissipation in Still Air at 85°C
mW
MSL
F
R
V
ESD
Moisture Sensitivity
Flammability Rating Oxygen Index: 28 to 34
ESD Withstand Voltage (Note 2)
Human Body Model, all pins
Human Body Model, A
n
/B
n
to Ground
Human Body Model, A
n
/B
n
to V
CC
I
LATCHUP
Latchup Performance Above V
CC
and Below GND at 125°C (Note 3)
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm−by−1 inch, 2 ounce copper trace no air flow.
2. Tested to EIA / JESD22−A114−A.
3. Tested to EIA / JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
I/O
T
A
Dt/DV
Positive DC Supply Voltage
Control Pin Input Voltage
Switch Input / Output Voltage
Operating Free−Air Temperature
Input Transition Rise or Fall Rate
Control Input
Switch I/O
Parameter
Min
4.0
0
0
−55
0
0
Max
5.5
5.5
5.5
+125
5
DC
Unit
V
V
V
°C
nS/V
Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond
the Recommended Operating Ranges limits may affect device reliability.
http://onsemi.com
3
7WB3306
DC ELECTRICAL CHARACTERISTICS
T
A
= 255C
Min
Typ
Max
−1.2
2.0
0.8
2.0
0.8
T
A
=
−555C to +1255C
Min
Max
−1.2
Unit
V
V
V
Symbol
V
IK
V
IH
V
IL
V
OH
I
IN
I
OFF
I
CC
DI
CC
Parameter
Clamp Diode Voltage
High−Level Input Voltage
(Control)
Low−Level Input Voltage
(Control)
Output Voltage High
Input Leakage Current
Power Off Leakage Current
Quiescent Supply Current
Increase in Supply Current
(Control Pin)
Switch ON Resistance
Conditions
I
I/O
= −18 mA
V
CC
(V)
4.5
4.0 to
5.5
4.0 to
5.5
See Figure 4
0
v
V
IN
v
5.5 V
V
I/O
= 0 to 5.5 V
I
O
= 0,
V
IN
= V
CC
or 0 V
One input at 3.4 V;
Other inputs at
V
CC
or GND
V
I/O
= 0,
I
I/O
= 64 mA
I
I/O
= 30 mA
V
I/O
= 2.4,
I
I/O
= 15 mA
V
I/O
= 2.4,
I
I/O
= 15 mA
4.0
10
20
20
5.5
0
5.5
5.5
$0.1
$0.1
$0.1
$1.0
$1.0
$1.0
2.5
mA
mA
mA
mA
R
ON
4.5
3
3
6
7
7
15
7
7
15
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
AC ELECTRICAL CHARACTERISTICS
T
A
= 25
5C
Min
Typ
Max
0.25
0.8
0.8
0.8
0.8
2.5
3.0
3.0
2.9
2.5
10
5
4.2
4.6
4.8
4.4
0.8
0.8
0.8
0.8
T
A
=
−555C to +1255C
Min
Max
0.25
4.2
4.6
4.8
4.4
pF
pF
pF
ns
Unit
ns
ns
Symbol
t
PD
t
EN
Parameter
Propagation Delay, Bus to Bus
Output Enable Time
Test Condition
See Figure 5
See Figure 5
V
CC
(V)
4.0 to
5.5
4.5 to
5.5
4.0
t
DIS
Output Disable Time
4.5 to
5.5
4.0
C
IN
C
IO(ON)
C
IO(OFF)
Control Input Capacitance
Switch On Capacitance
Switch Off Capacitance
V
IN
= 5 or 0 V
Switch ON
Switch OFF
5.0
5.0
5.0
http://onsemi.com
4
7WB3306
TYPICAL DC CHARACTERISTICS
4.50
V
OH
, HIGH LEVEL OUTPUT VOLT-
AGE (V)
4.25
4.00
3.75
3.50
3.25
3.00
2.75
2.50
2.25
4.00
4.25
4.75
5.00
5.25
T
A
= +85°C
V
IN
= V
CC
5.50
5.75
5.60
−24 mA
I
OH
=
−0.1 mA
−6 mA
−12 mA
V
CC
, SUPPLY VOLTAGE (V)
4.50
V
OH
, HIGH LEVEL OUTPUT VOLT-
AGE (V)
4.25
4.00
3.75
3.50
3.25
3.00
2.75
2.50
2.25
4.00
4.25
4.75
5.00
5.25
T
A
= +25°C
V
IN
= V
CC
5.50
5.75
5.60
I
OH
=
−0.1 mA
−24 mA
−6 mA
−12 mA
V
CC
, SUPPLY VOLTAGE (V)
4.50
V
OH
, HIGH LEVEL OUTPUT VOLT-
AGE (V)
4.25
4.00
3.75
3.50
3.25
3.00
2.75
2.50
2.25
4.00
4.25
4.75
5.00
5.25
T
A
= −40°C
V
IN
= V
CC
5.50
5.75
5.60
−24 mA
I
OH
=
−0.1 mA
−6 mA
−12 mA
V
CC
, SUPPLY VOLTAGE (V)
Figure 4. Output Voltage High vs Supply Voltage
http://onsemi.com
5
NXP MCU
京公网安备 11010802033920号
EEWORLD
