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DS1225AD-200IND

Description
NVRAM 64k Nonvolatile SRAM
Categorystorage    storage   
File Size189KB,9 Pages
ManufacturerMaxim
Websitehttps://www.maximintegrated.com/en.html
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DS1225AD-200IND Overview

NVRAM 64k Nonvolatile SRAM

DS1225AD-200IND Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerMaxim
Parts packaging codeMODULE
package instruction0.720 INCH, DIP-28
Contacts28
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum access time200 ns
Other features10 YEAR DATA RETENTION
JESD-30 codeR-PDMA-P28
JESD-609 codee0
memory density65536 bit
Memory IC TypeNON-VOLATILE SRAM MODULE
memory width8
Number of functions1
Number of terminals28
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
organize8KX8
Package body materialPLASTIC/EPOXY
encapsulated codeDIP
Encapsulate equivalent codeDIP28,.6
Package shapeRECTANGULAR
Package formMICROELECTRONIC ASSEMBLY
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum standby current0.005 A
Maximum slew rate0.085 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountNO
technologyCMOS
Temperature levelINDUSTRIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formPIN/PEG
Terminal pitch2.54 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
19-5625; Rev 11/10
DS1225AB/AD
64k Nonvolatile SRAM
www.maxim-ic.com
FEATURES
10 years minimum data retention in the
absence of external power
Data is automatically protected during power
loss
Directly replaces 8k x 8 volatile static RAM
or EEPROM
Unlimited write cycles
Low-power CMOS
JEDEC standard 28-pin DIP package
Read and write access times of 70 ns
Lithium energy source is electrically
disconnected to retain freshness until power
is applied for the first time
Full ±10% V
CC
operating range (DS1225AD)
Optional ±5% V
CC
operating range
(DS1225AB)
Optional industrial temperature range of
-40°C to +85°C, designated IND
PIN ASSIGNMENT
NC
A12
A7
A6
A5
A4
A3
A2
A1
A0
DQ0
DQ1
DQ2
GND
1
2
3
4
5
6
7
8
9
10
11
12
13
14
28
27
26
25
24
23
22
21
20
19
18
17
16
15
VCC
WE
NC
A8
A9
A11
OE
A10
CE
DQ7
DQ6
DQ5
DQ4
DQ3
28-Pin ENCAPSULATED PACKAGE
720-mil EXTENDED
PIN DESCRIPTION
A0-A12
DQ0-DQ7
CE
WE
OE
V
CC
GND
NC
- Address Inputs
- Data In/Data Out
- Chip Enable
- Write Enable
- Output Enable
- Power (+5V)
- Ground
- No Connect
DESCRIPTION
The DS1225AB and DS1225AD are 65,536-bit, fully static, nonvolatile SRAMs organized as 8192 words
by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which
constantly monitors V
CC
for an out-of-tolerance condition. When such a condition occurs, the lithium
energy source is automatically switched on and write protection is unconditionally enabled to prevent
data corruption. The NV SRAMs can be used in place of existing 8k x 8 SRAMs directly conforming to
the popular bytewide 28-pin DIP standard. The devices also match the pinout of the 2764 EPROM and
the 2864 EEPROM, allowing direct substitution while enhancing performance. There is no limit on the
number of write cycles that can be executed and no additional support circuitry is required for
microprocessor interfacing.
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