Doc No.
TT4-EA-12581
Revision.
3
Product Standards
Zener Diode
DZ3S068D0L
DZ3S068D0L
Silicon epitaxial planar type
For surge absorption circuit
Unit: mm
1.6
0.26
0.13
Features
Excellent rising characteristics of zener current Iz
Low zener operating resistance Rz
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
3
1
2
0.85
1.6
0.7
(0.5) (0.5)
1.0
Marking Symbol:02
Packaging
Embossed type (Thermo-compression sealing)
3 000 pcs / reel (standard)
1. Cathode1
2. Cathode2
3. Anode1,2
Panasonic
JEITA
Code
SSMini3-F3-B
SC-89
SOT-490
Absolute Maximum Ratings Ta = 25
C
Parameter
Symbol
Total power dissipation
Electrostatic discharge
*2
Junction temperature
Operating ambient temperature
Storage temperature
*1
Rating
150
±10
150
-40 to +85
-55 to +150
Unit
mW
kV
°C
°C
°C
PT
ESD
Tj
Topr
Tstg
Internal Connection
3
Note) *1: Mounted on glass epoxy print board. ( 45 mm x 45 mm x 1 mm)
(2 Diode total)
Solder in ( 0.6 mm x 0.6 mm)
*2:
Test method:IEC61000_4_2(C = 150 pF,R = 330
,
Contact discharge:10 times)
1
2
Electrical Characteristics Ta = 25
C
3
C
Parameter
Symbol
Forward voltage
*1, *2
Zener voltage
Zener operating resistance
Zener rise operating resistance
Reverse current
Temperature coefficient of zener voltage
VF
VZ
RZ
RZK
IR
SZ
Conditions
IF = 10 mA
IZ = 5 mA
IZ = 5 mA
IZ = 0.5 mA
VR = 4 V
IZ = 5 mA
Min
6.46
Typ Max
1.0
7.14
30
60
0.1
3.1
Unit
V
V
μA
mV/°C
*3
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2. *1: The temperature must be controlled 25°C for VZ mesurement.
VZ value measured at other temperature must be adjusted to VZ (25°C)
*2: VZ guaranted 20 ms after current flow.
*3: Tj = 25°C to 150°C
Page 1 of 4
Established : 2010-05-17
Revised
: 2013-10-22
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