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IRG4RC10UDPBF

Description
Gate Drivers SOLID STATE RELAY
CategoryDiscrete semiconductor    The transistor   
File Size302KB,11 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
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IRG4RC10UDPBF Overview

Gate Drivers SOLID STATE RELAY

IRG4RC10UDPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInfineon
package instructionLEAD FREE, DPAK-3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW CONDUCTION LOSS
Shell connectionCOLLECTOR
Maximum collector current (IC)8.5 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)210 ns
Gate-emitter maximum voltage20 V
JEDEC-95 codeTO-252AA
JESD-30 codeR-PSSO-G2
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)38 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn) - with Nickel (Ni) barrier
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)345 ns
Nominal on time (ton)56 ns
Base Number Matches1
PD - 95328
IRG4RC10UDPbF
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH
ULTRAFAST SOFT RECOVERY DIODE
UltraFast CoPack IGBT
C
• UltraFast: Optimized for medium operating
frequencies ( 8-40 kHz in hard switching, >200
kHz in resonant mode).
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
previous generation
• IGBT co-packaged with HEXFRED
TM
ultrafast,
ultra-soft-recovery anti-parallel diodes for use
in
bridge configurations
• Industry standard TO-252AA package
• Lead-Free
• Generation 4 IGBT's offer highest efficiencies
available
• IGBT's optimized for specific application conditions
• HEXFRED diodes optimized for performance with
IGBT's . Minimized recovery characteristics require
less/no snubbing
• Lower losses than MOSFET's conduction and Diode
losses
V
CES
= 600V
V
CE(on) typ.
=
2.15V
G
E
@V
GE
= 15V, I
C
= 5.0A
n-channel
t
f
(typ.) = 140ns
Benefits
D-PAK
TO-252AA
Absolute Maximum Ratings
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 100°C
I
CM
I
LM
I
F
@ T
C
= 100°C
I
FM
V
GE
P
D
@ T
C
= 25°C
P
D
@ T
C
= 100°C
T
J
T
STG
Parameter
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Pulsed Collector Current

Clamped Inductive Load Current
‚
Diode Continuous Forward Current
Diode Maximum Forward Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting Torque, 6-32 or M3 Screw.
Max.
600
8.5
5.0
34
34
4.0
16
± 20
38
15
-55 to +150
300 (0.063 in. (1.6mm) from case)
10 lbf•in (1.1 N•m)
Units
V
A
V
W
°C
Thermal Resistance
Parameter
R
θJC
R
θJC
R
θJA
Wt
Junction-to-Case - IGBT
Junction-to-Case - Diode
Junction-to-Ambient (PCB mount)*
Weight
Min.
–––
–––
–––
–––
Typ.
–––
–––
–––
0.3 (0.01)
Max.
3.3
7.0
50
–––
Units
°C/W
g (oz)
Details of note

through
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are on the last page
www.irf.com
1
6/2/04
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