NSR15DW1
Dual RF Schottky Diode
These diodes are designed for analog and digital applications,
including DC based signal detection and mixing applications.
Features
•
•
•
•
Low Capacitance (<1 pF)
Low V
F
(390 mV typical @ 1 mA)
Low V
FD
(1 mV typical @ 1 mA)
Pb−Free Package is Available
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Benefits
RF SCHOTTKY
BARRIER DIODES
15 VOLTS, 30 mA
6
5
4
•
Reduced Parasitic Losses
•
Accurate Signal Measurement
MAXIMUM RATINGS
Rating
Peak Reverse Voltage
Forward Current
Operating and Storage Temperature Range
ESD Rating: Class 1 per Human Body Model
ESD Rating:
Class A per Machine Model
Symbol
V
R
I
F
T
J
, T
stg
Max
15
30
−65 to +150
Unit
V
mA
°C
1
2
3
THERMAL CHARACTERISTICS
Characteristic
Maximum Thermal Resistance,
Junction−to−Ambient
Symbol
R
qJA
Value
500
Unit
°C/W
1
SC−88
CASE 419B
STYLE 21
MARKING DIAGRAM
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
R5
M
G
R5 M
G
G
= Specific Device Code
= Date Code
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Device
NSR15DW1T1
NSR15DW1T1G
Package
SC−88
SC−88
(Pb−Free)
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2006
1
May, 2006 − Rev. 2
Publication Order Number:
NSR15DW1/D
NSR15DW1
DV
F
, FORWARD VOLTAGE DIFFERENCE (mV)
I
F
, FORWARD CURRENT (mA)
100
I
F
, FORWARD CURRENT (mA)
I
F
(left scale)
10
DV
F
(right scale)
1
1
100
100
10
DV
F
, FORWARD VOLTAGE DIFFERENTIAL (mV)
I
F
(left scale)
10
10
1
DV
F
(right scale)
0.1
0.3
0.4
0.5
0.6
0.7
V
F
, FORWARD VOLTAGE (V)
0.8
0.1
1
0.1
0.175
0.275
0.225
V
F
, FORWARD VOLTAGE (V)
0.325
Figure 5. Typical V
F
Match at Mixer Bias Levels
Figure 6. Typical V
F
Match at Detector Bias Levels
1
DC Bias = 3
mA
10
1
0.1
V
DET
, (Vdc)
0.01
0.001
RF IN
68
W
NSR15DW1
V
O
4.7 kW
V
DET
, (Vdc)
0.1
RF IN
0.01
3.3 nH
NSR15DW1
18 nH
100 pF
V
O
100 kW
0.0001
0.00001
100 pF
0.001
−40
−35
−30
−25 −20
−15
−10
P
in
, INPUT POWER (dBm)
−5
0
0.000001
−20 −15 −10
−5
0
5
10 15
P
in
, INPUT POWER (dBm)
20
25
30
Figure 7. Typical Output Voltage versus Input Power,
Small Signal Detector Operating at 850 MHz
Figure 8. Typical Output Voltage versus Input
Power, Large Signal Detector Operating at 915 MHz
12
CONVERSION LOSS (dB)
10
9
8
7
6
−2
0
10
2
4
6
8
LOCAL OSCILLATOR POWER (dBm)
12
Figure 9. Typical Conversion Loss versus L.O. Drive,
2.0 GHz
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3
NSR15DW1
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE W
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 419B−01 OBSOLETE, NEW STANDARD 419B−02.
D
e
6
5
4
H
E
1
2
3
−E−
b
6 PL
0.2 (0.008)
M
DIM
A
A1
A3
b
C
D
E
e
L
H
E
MILLIMETERS
MIN
NOM MAX
0.80
0.95
1.10
0.00
0.05
0.10
0.20 REF
0.10
0.21
0.30
0.10
0.14
0.25
1.80
2.00
2.20
1.15
1.25
1.35
0.65 BSC
0.10
0.20
0.30
2.00
2.10
2.20
INCHES
NOM MAX
0.037 0.043
0.002 0.004
0.008 REF
0.004 0.008 0.012
0.004 0.005 0.010
0.070 0.078 0.086
0.045 0.049 0.053
0.026 BSC
0.004 0.008 0.012
0.078 0.082 0.086
MIN
0.031
0.000
E
M
A3
C
A
STYLE 21:
PIN 1. ANODE 1
2. N/C
3. ANODE 2
4. CATHODE 2
5. N/C
6. CATHODE 1
A1
L
SOLDERING FOOTPRINT*
0.50
0.0197
0.65
0.025
0.65
0.025
0.40
0.0157
1.9
0.0748
SCALE 20:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor
and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NSR15DW1/D
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