EEWORLDEEWORLDEEWORLD

Part Number

Search

IRLL014TRPBF

CategoryDiscrete semiconductor    The transistor   
File Size169KB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance
Download Datasheet Parametric View All

IRLL014TRPBF Online Shopping

Suppliers Part Number Price MOQ In stock  
IRLL014TRPBF - - View Buy Now

IRLL014TRPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerVishay
Parts packaging codeTO-261AA
package instructionSMALL OUTLINE, R-PDSO-G3
Contacts4
Reach Compliance Codeunknown
ECCN codeEAR99
Samacsys DescriptionN channel ;VBRDSS 60 V; RDSon 200 mOhm
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)100 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)2.7 A
Maximum drain-source on-resistance0.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-261AA
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)22 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
IRLL014, SiHLL014
www.vishay.com
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
()
Q
g
max. (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 5.0 V
8.4
3.5
6.0
Single
D
FEATURES
60
0.20
Surface mount
Available in tape and reel
Dynamic dV/dt rating
Logic-level gate drive
R
DS(on)
specified at V
GS
= 4 V and 5 V
Available
Fast switching
Ease of paralleling
Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
DESCRIPTION
SOT-223
D
G
G
D
S
Marking code: LA
S
N-Channel MOSFET
Third generation power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The SOT-223 package is designed for surface-mounting
using vapor phase, infrared, or wave soldering techniques.
Its unique package design allows for easy automatic
pick-and-place as with other SOT or SOIC packages but
has the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation of
greater than 1.25 W is possible in a typical surface mount
application.
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
Lead (Pb)-free
Note
a. See device orientation.
SOT-223
SiHLL014TR-GE3
IRLL014TRPbF
a
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25 °C, unless otherwise noted)
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Linear Derating Factor
Linear Derating Factor (PCB mount)
e
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Maximum Power Dissipation (PCB mount)
e
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak temperature)
d
a
SYMBOL
V
DS
V
GS
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25 °C
T
A
= 25 °C
P
D
dV/dt
T
J
, T
stg
for 10 s
LIMIT
60
± 10
2.7
1.7
22
0.025
0.017
100
2.7
0.31
3.1
2.0
4.5
-55 to +150
300
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 16 mH, R
g
= 25
,
I
AS
= 2.7 A (see fig. 12).
c. I
SD
10 A, dI/dt
90 A/μs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
S16-0015-Rev. F, 18-Jan-16
Document Number: 91319
1
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
What is a thick film non-inductive resistor? What is its main use?
List of component information summary: https://bbs.eeworld.com.cn/thread-1084638-1-1.htmlI saw thick film non-inductive resistors on the list. What kind of resistors are they? Where are they mainly us...
okhxyyo Electronics Design Contest
Atmel SAM4S Xplained Pro starter kit之PIO
Today I will share the SAM4S PIO module in the SAM4S Xplained Pro starter kit. This time I used IAR as the compilation environment, and ported a routine from AS 6.2 to IAR. This is a template with a l...
强仔00001 Microchip MCU
Network Computer (NC)
More than 70% of network damage comes from inside rather than outside? Are the company's confidential documents (financial information, customer information, design information, etc.) really safe? Can...
sypanyue Embedded System
Wireless Charging Technology
With the development of smart mobile devices, the public has higher and higher requirements for the power supply of mobile devices such as mobile phones. Therefore, wireless charging technology has at...
木犯001号 Power technology
Hardware engineer interview questions
Analog Circuit 1. What is the content of Kirchhoff's theorem? (Shilan Microelectronics) 2. The formula of the plate capacitor (C=εS/4πkd). (Unknown) 3. The most basic one is the curve characteristic o...
limeiyue MCU
The video signal carrying capacity close to 1MHz is not enough. What op amp can I use to design a voltage follower?
As the title says, the video signal current output by the linear array CMOS is too small, and the input resistance of the AD module used is only 50ohm. I want to use an op amp to design a voltage foll...
XuYong虚庸 Analog electronics

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1895  2128  2783  1641  2335  39  43  57  34  48 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号