BLF8G10L-160;
BLF8G10LS-160
Power LDMOS transistor
Rev. 3 — 16 February 2012
Product data sheet
1. Product profile
1.1 General description
160 W LDMOS power transistor for base station applications at frequencies from
920 MHz to 960 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
C in a common source class-AB production test circuit.
Test signal
2-carrier W-CDMA
[1]
f
(MHz)
920 to 960
I
Dq
(mA)
1100
V
DS
(V)
30
P
L(AV)
(W)
35
G
p
(dB)
19.7
D
(%)
29
ACPR
(dBc)
38
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier.
Carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low R
th
providing excellent thermal stability
Designed for broadband operation (920 MHz to 960 MHz)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
RF power amplifiers for W-CDMA base stations and multi carrier applications in the
920 MHz to 960 MHz frequency range
NXP Semiconductors
BLF8G10L-160; BLF8G10LS-160
Power LDMOS transistor
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
Graphic symbol
BLF8G10L-160 (SOT502A)
1
3
2
2
3
sym112
1
BLF8G10LS-160 (SOT502B)
1
2
3
drain
gate
source
[1]
1
3
2
2
1
3
sym112
[1]
Connected to flange
3. Ordering information
Table 3.
Ordering information
Package
Name Description
BLF8G10L-160
BLF8G10LS-160
-
-
flanged LDMOST ceramic package; 2 mounting holes;
2 leads
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502A
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
storage temperature
junction temperature
Conditions
Min
-
0.5
65
-
Max
65
+13
+150
200
Unit
V
V
C
C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-c)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
C;
P
L
= 35 W;
V
DS
= 30 V; I
Dq
= 1100 mA
Typ
Unit
0.50 K/W
BLF8G10L-160_8G10LS-160
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 16 February 2012
2 of 13
NXP Semiconductors
BLF8G10L-160; BLF8G10LS-160
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
C unless otherwise specified.
Symbol Parameter
V
GS(th)
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
gate-source threshold voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
Conditions
V
DS
= 10 V; I
D
= 220 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 7.7 A
Min
65
1.5
-
-
-
-
-
Typ
-
2.0
-
37.0
-
14.6
86
Max
-
2.3
5
-
0.5
-
-
Unit
V
V
A
A
A
S
m
V
(BR)DSS
drain-source breakdown voltage V
GS
= 0 V; I
D
= 2.2 mA
drain-source on-state resistance V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 7.7 A
7. Test information
Table 7.
Functional test information
Test signal: 2-carrier W-CDMA; PAR = 7.5 dB at 0.01 % probability on the CCDF;
3GPP test model 1; 64 DPCH; f
1
= 920 MHz; f
2
= 925 MHz; f
3
= 955 MHz; f
4
= 960 MHz;
RF performance at V
DS
= 30 V; I
Dq
= 1100 mA; T
case
= 25
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
G
p
RL
in
D
ACPR
Parameter
power gain
input return loss
drain efficiency
adjacent channel power ratio
Conditions
P
L(AV)
= 35 W
P
L(AV)
= 35 W
P
L(AV)
= 35 W
P
L(AV)
= 35 W
Min
19
-
27
-
Typ
19.7
15
29
38
Max
-
10
-
34
Unit
dB
dB
%
dBc
7.1 Ruggedness in class-AB operation
The BLF8G10L-160 and BLF8G10LS-160 are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
V
DS
= 30 V; I
Dq
= 1100 mA; P
L
= 130 W (CW); f = 920 MHz to 960 MHz.
BLF8G10L-160_8G10LS-160
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 16 February 2012
3 of 13
NXP Semiconductors
BLF8G10L-160; BLF8G10LS-160
Power LDMOS transistor
7.2 Impedance information
Table 8.
Typical impedance information
I
Dq
= 1100 mA; main transistor V
DS
= 30 V.
Z
S
and Z
L
defined in
Figure 1.
f
(MHz)
925
942
960
Z
S
()
4.0
j3.8
4.4
j4.2
4.6
j4.1
Z
L
()
1.7
j2.5
1.5
j2.2
1.4
j2.3
drain
Z
L
gate
Z
S
001aaf059
Fig 1.
Definition of transistor impedance
7.3 CW pulse
21
aaa-001287
G
p
(dB)
70
η
D
(%)
G
p
(dB)
21
G
p
aaa-001288
70
η
D
(%)
G
p
19
(1)
(2)
60
60
50
19
η
D
(1)
(2)
(3)
50
40
40
17
η
D
(3)
30
17
30
20
20
15
44
46
48
50
10
52
54
P
L
(dBm)
15
0
50
100
150
10
200
250
P
L
(W)
V
DS
= 30 V; I
Dq
= 1100 mA.
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
V
DS
= 30 V; I
Dq
= 1100 mA.
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
Fig 2.
Power gain and drain efficiency as function of
output power; typical values
Fig 3.
Power gain and drain efficiency as function of
output power; typical values
BLF8G10L-160_8G10LS-160
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 16 February 2012
4 of 13
NXP Semiconductors
BLF8G10L-160; BLF8G10LS-160
Power LDMOS transistor
-10
RL
in
(dB)
-13
(3)
aaa-001289
-16
(2)
-19
(1)
-22
-25
44
46
48
50
52
54
P
L
(dBm)
V
DS
= 30 V; I
Dq
= 1100 mA.
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
Fig 4.
Input return loss as a function of output power; typical values
7.4 2-Carrier W-CDMA
21
G
p
50
aaa-001290
G
p
(dB)
60
η
D
(%)
G
p
(dB)
21
G
p
aaa-001291
60
η
D
(%)
20
20
(1)
(2)
(3)
50
19
(1)
(2)
(3)
40
19
40
18
30
18
30
17
η
D
16
20
17
η
D
20
10
16
10
15
38
42
46
P
L
(dBm)
50
0
15
0
20
40
60
80
0
100
P
L
(W)
V
DS
= 30 V; I
Dq
= 1100 mA.
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
V
DS
= 30 V; I
Dq
= 1100 mA.
(1) f = 920 MHz
(2) f = 940 MHz
(3) f = 960 MHz
Fig 5.
Power gain and drain efficiency as function of
output power; typical values
Fig 6.
Power gain and drain efficiency as function of
output power; typical values
BLF8G10L-160_8G10LS-160
All information provided in this document is subject to legal disclaimers.
© NXP B.V. 2012. All rights reserved.
Product data sheet
Rev. 3 — 16 February 2012
5 of 13
京公网安备 11010802033920号
EEWORLD
