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FDB6644

Description
30V N-Channel PowerTrench MOSFET
CategoryDiscrete semiconductor    The transistor   
File Size71KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FDB6644 Overview

30V N-Channel PowerTrench MOSFET

FDB6644 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerFairchild
Parts packaging codeD2PAK
package instructionD2PAK-3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)240 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)50 A
Maximum drain current (ID)50 A
Maximum drain-source on-resistance0.0105 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature175 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)83 W
Maximum pulsed drain current (IDM)150 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
FDP6644/FDB6644
June 2001
FDP6644/FDB6644
30V N-Channel PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS
(ON)
specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
50 A, 30 V.
R
DS(ON)
= 8.5 mΩ @ V
GS
= 10 V
R
DS(ON)
= 10.5 mΩ @ V
GS
= 4.5 V
Low gate charge (27 nC typical)
Fast switching speed
High performance trench technology for extremely
low R
DS(ON)
175°C maximum junction temperature rating
D
D
G
G
D
TO-220
S
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
30
±
16
(Note 1)
(Note 1)
Units
V
V
A
A
W
W/°C
°C
50
150
83
0.55
-65 to +175
Total Power Dissipation @ T
C
= 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
1.8
62.5
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
FDB6644
FDP6644
Device
FDB6644
FDP6644
Reel Size
13’’
Tube
Tape width
24mm
n/a
Quantity
800 units
45
©2001
Fairchild Semiconductor Corporation
FDP6644 Rev C(W)

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FDB6644 FDP6644
Description 30V N-Channel PowerTrench MOSFET 30V N-Channel PowerTrench MOSFET
Is it Rohs certified? incompatible incompatible
Maker Fairchild Fairchild
Parts packaging code D2PAK TO-220AB
package instruction D2PAK-3 TO-220, 3 PIN
Contacts 3 3
Reach Compliance Code compli compli
ECCN code EAR99 EAR99
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