Continuous Power Dissipation (Note 1) ..............................5.3W
Operating Case Temperature Range (Note 4) .. -40NC to +85NC
Junction Temperature .....................................................+150NC
Storage Temperature Range............................ -65NC to +150NC
Lead Temperature (soldering, 10s) ................................+300NC
Soldering Temperature (reflow) ......................................+260NC
Note 1:
Based on junction temperature T
J
= T
C
+ (q
JC
x V
CC
x I
CC
). This formula can be used when the temperature of the exposed
pad is known while the device is soldered down to a PCB. See the
Applications Information
section for details. The junction
temperature must not exceed +150NC.
Note 2:
Package thermal resistances were obtained using the method described in JEDEC specification JESD51-7, using a four-
layer board. For detailed information on package thermal considerations, refer to
www.maximintegrated.com/thermal-tutorial.
Note 3:
Junction temperature T
J
= T
A
+ (q
JA
x V
CC
x I
CC
). This formula can be used when the ambient temperature of the PCB is
known. The junction temperature must not exceed +150NC.
Note 4:
T
C
is the temperature on the exposed pad of the package. T
A
is the ambient temperature of the device and PCB.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
5.0V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit,
V
CC
= V
CC_AMP_1
= V
CC_AMP_2
= V
CC_RG
= 4.75V to 5.25V, AMPSET = 0, PD_1 = PD_2 = 0,
T
C
= -40NC to +85NC. Typical values are at V
CC_
= 5.0V and T
C
= +25NC, unless otherwise noted.)
PARAMETER
Supply Voltage
Supply Current
Power-Down Current
Logic-Low Input Voltage
Logic-High Input Voltage
Input Logic Current
SYMBOL
V
CC
I
DC
I
DCPD
V
IL
V
IH
I
IH,
I
IL
1.7
-1
PD_1 = PD_2 = 1, V
IH
= 3.3V
CONDITIONS
MIN
4.75
TYP
5
148
5.3
MAX
5.25
210
8
0.5
3.465
+1
UNITS
V
mA
mA
V
V
FA
3.3V SUPPLY DC ELECTRICAL CHARACTERISTICS
(Typical
Application Circuit,
V
CC
= V
CC_AMP_1
= V
CC_AMP_2
= V
CC_RG
= 3.135V to 3.465V, AMPSET = 1, PD_1 = PD_2 = 0,
T
C
= -40NC to +85NC. Typical values are at V
CC_
= 3.3V and T
C
= +25NC, unless otherwise noted.)
PARAMETER
Supply Voltage
Supply Current
Power-Down Current
Logic-Low Input Voltage
Logic-High Input Voltage
SYMBOL
V
CC
I
DC
I
DCPD
V
IL
V
IH
PD_1 = PD_2 = 1, V
IH
= 3.3V
CONDITIONS
MIN
3.135
TYP
3.3
87
4.5
0.5
1.7
MAX
3.465
145
8
UNITS
V
mA
mA
V
V
2
Maxim Integrated
MAX2062
Dual 50MHz to 1000MHz High-Linearity,
Serial/Parallel-Controlled Analog/Digital VGA
RECOMMENDED AC OPERATING CONDITIONS
PARAMETER
RF Frequency
SYMBOL
f
RF
(Note 5)
CONDITIONS
MIN
50
TYP
MAX
1000
UNITS
MHz
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (Each Path, Unless Otherwise
Noted)
(Typical
Application Circuit,
V
CC
= V
CC_AMP_1
= V
CC_AMP_2
= V
CC_RG
= 4.75V to 5.25V, attenuators are set for maximum gain, RF
ports are driven from 50I sources, AMPSET = 0, PD_1 = PD_2 = 0, 100MHz
P
f
RF
P
500MHz, T
C
= -40NC to +85NC. Typical values
are at maximum gain setting, V
CC_
= 5.0V, P
IN
= -20dBm, f
RF
= 350MHz, and T
C
= +25NC, unless otherwise noted.) (Note 6)
PARAMETER
SYMBOL
f
RF
= 50MHz
f
RF
= 100MHz
f
RF
= 200MHz
Small-Signal Gain
G
f
RF
= 350MHz, T
C
= +25NC
f
RF
= 450MHz
f
RF
= 750MHz
f
RF
= 900MHz
Gain vs. Temperature
From 100MHz to 200MHz
Gain Flatness vs. Frequency
Any 100MHz frequency band from 200MHz
to 500MHz
f
RF
= 50MHz
f
RF
= 100MHz
f
RF
= 200MHz
Noise Figure
NF
f
RF
= 350MHz
f
RF
= 450MHz
f
RF
= 750MHz
f
RF
= 900MHz
Total Attenuation Range
Output Second-Order Intercept
Point
OIP2
Analog and digital combined
P
OUT
= 0dBm/tone,
Df
= 1MHz, f
1
+ f
2
RF input 1 amplified power measured at RF
output 2 relative to RF output 1, all unused
ports terminated to 50I
RF input 2 amplified signal measured at RF
output 1 relative to RF output 2, all unused
ports terminated to 50I
P
OUT
= 0dBm/tone,
Df
= 1MHz, f
RF
= 50MHz
P
OUT
= 0dBm/tone,
Df
= 1MHz, f
RF
= 100MHz
Output Third-Order Intercept
Point
P
OUT
= 0dBm/tone,
Df
= 1MHz, f
RF
= 200MHz
OIP3
P
OUT
= 0dBm/tone,
Df
= 1MHz, f
RF
= 350MHz
P
OUT
= 0dBm/tone,
Df
= 1MHz, f
RF
= 450MHz
P
OUT
= 0dBm/tone,
Df
= 1MHz, f
RF
= 750MHz
P
OUT
= 0dBm/tone,
Df
= 1MHz, f
RF
= 900MHz
Output -1dB Compression Point
Maxim Integrated
CONDITIONS
MIN
TYP
20.3
19.9
19.4
MAX
UNITS
17.0
18.9
18.6
17.8
16.5
-0.01
0.5
0.34
6.4
6.8
7.3
7.6
7.8
8.7
9.0
64.1
52.1
21.0
dB
dB/NC
dB
dB
dB
dBm
48.6
dB
47.7
47.5
43.4
41.3
37.4
35.1
28.8
25.8
17
18.8
dBm
3
Path Isolation
dBm
P
1dB
f
RF
= 350MHz, T
C
= +25NC (Note 7)
MAX2062
Dual 50MHz to 1000MHz High-Linearity,
Serial/Parallel-Controlled Analog/Digital VGA
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (Each Path, Unless Otherwise
Noted) (continued)
(Typical
Application Circuit,
V
CC
= V
CC_AMP_1
= V
CC_AMP_2
= V
CC_RG
= 4.75V to 5.25V, attenuators are set for maximum gain, RF
ports are driven from 50I sources, AMPSET = 0, PD_1 = PD_2 = 0, 100MHz
P
f
RF
P
500MHz, T
C
= -40NC to +85NC. Typical values
are at maximum gain setting, V
CC_
= 5.0V, P
IN
= -20dBm, f
RF
= 350MHz, and T
C
= +25NC, unless otherwise noted.) (Note 6)
PARAMETER
Second Harmonic
Third Harmonic
Group Delay
Amplifier Power-Down Time
Amplifier Power-Up Time
Input Return Loss
Output Return Loss
Insertion Loss
Input Second-Order Intercept
Point
Input Third-Order Intercept Point
Attenuation Range
Step Size
Relative Attenuation Accuracy
Absolute Attenuation Accuracy
0dB to 16dB
Insertion Phase Step
f
RF
= 170MHz
0dB to 24dB
0dB to 31dB
Amplitude Overshoot/Undershoot
Switching Speed
Input Return Loss
Output Return Loss
Insertion Loss
Input Second-Order Intercept
Point
Input Third-Order Intercept Point
P
IN1
= 0dBm, P
IN2
= 0dBm (minimum
attenuation),
Df
= 1MHz, f
1
+ f
2
P
IN1
= 0dBm, P
IN2
= 0dBm (minimum
attenuation),
Df
= 1MHz
Between any two Elapsed time = 15ns
states
Elapsed time = 40ns
RF settled to
within
Q0.1dB
50I source
50I load
31dB to 0dB
0dB to 31dB
P
IN1
= 0dBm, P
IN2
= 0dBm (minimum
attenuation),
Df
= 1MHz, f
1
+ f
2
P
IN1
= 0dBm, P
IN2
= 0dBm (minimum
attenuation),
Df
= 1MHz
f
RF
= 350MHz, T
C
= +25NC, V
CC
= 5.0V
29.5
RL
IN
RL
OUT
SYMBOL
CONDITIONS
P
OUT
= +3dBm
P
OUT
= +3dBm
Includes EV kit PCB delays
PD_1 or PD_2 from 0 to 1, amplifier DC
supply current settles to within 0.1mA
PD_1 or PD_2 from 1 to 0, amplifier DC
supply current settles to within 1%
50I source
50I load
MIN
TYP
-55.0
-72.7
1.03
0.5
0.5
16.1
30.8
3.0
53.6
41.5
30.9
1
0.13
0.14
0
1.1
1.2
1.0
0.05
25
21
22.0
21.9
2.2
61.9
37.0
dB
ns
dB
dB
dB
dBm
dBm
Degrees
MAX
UNITS
dBc
dBc
ns
Fs
Fs
dB
dB
dB
dBm
dBm
dB
dB
dB
dB
DIGITAL ATTENUATOR (Each Path, Unless Otherwise Noted)
ANALOG ATTENUATOR (Each Path, Unless Otherwise Noted)
4
Maxim Integrated
MAX2062
Dual 50MHz to 1000MHz High-Linearity,
Serial/Parallel-Controlled Analog/Digital VGA
5.0V SUPPLY AC ELECTRICAL CHARACTERISTICS (Each Path, Unless Otherwise
Noted) (continued)
(Typical
Application Circuit,
V
CC
= V
CC_AMP_1
= V
CC_AMP_2
= V
CC_RG
= 4.75V to 5.25V, attenuators are set for maximum gain, RF
ports are driven from 50I sources, AMPSET = 0, PD_1 = PD_2 = 0, 100MHz
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Embedded System
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