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DN2535N5-G

Description
Trans MOSFET N-CH Si 350V 0.5A 3-Pin(3+Tab) TO-220 Tube
CategoryDiscrete semiconductor    The transistor   
File Size455KB,6 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Environmental Compliance
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DN2535N5-G Overview

Trans MOSFET N-CH Si 350V 0.5A 3-Pin(3+Tab) TO-220 Tube

DN2535N5-G Parametric

Parameter NameAttribute value
EU restricts the use of certain hazardous substancesCompliant
ECCN (US)EAR99
Part StatusActive
HTS8541.29.00.95
Product CategoryPower MOSFET
MaterialSi
ConfigurationSingle
Process TechnologyDMOS
Channel ModeDepletion
Channel TypeN
Number of Elements per Chip1
Maximum Drain Source Voltage (V)350
Maximum Gate Source Voltage (V)±20
Maximum Continuous Drain Current (A)0.5
Maximum Gate Source Leakage Current (nA)100
Maximum Drain Source Resistance (mOhm)25000@0V
Typical Input Capacitance @ Vds (pF)200@25V
Maximum Power Dissipation (mW)15000
Typical Fall Time (ns)20(Max)
Typical Rise Time (ns)15(Max)
Typical Turn-Off Delay Time (ns)15(Max)
Typical Turn-On Delay Time (ns)10(Max)
Minimum Operating Temperature (°C)-55
Maximum Operating Temperature (°C)150
PackagingTube
Supplier PackageTO-220
Pin Count3
Standard Package NameTO-220
MountingThrough Hole
Package Height9.02(Max)
Package Length10.67(Max)
Package Width4.83(Max)
PCB changed3
TabTab
DN2535
N-Channel Depletion-Mode
Vertical DMOS FETs
Features
High input impedance
Low input capacitance
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
General Description
The Supertex DN2535 is a low threshold depletion mode
(normally-on) transistor utilizing an advanced vertical
DMOS structure and Supertex’s well-proven silicon-gate
manufacturing process. This combination produces a device
with the power handling capabilities of bipolar transistors
and with the high input impedance and positive temperature
coefficient inherent in MOS devices. Characteristic of all
MOS structures, this device is free from thermal runaway and
thermally-induced secondary breakdown.
Supertex’s vertical DMOS FETs are ideally suited to a
wide range of switching and amplifying applications where
high breakdown voltage, high input impedance, low input
capacitance, and fast switching speeds are desired.
Applications
Normally-on switches
Solid state relays
Converters
Linear amplifiers
Constant current sources
Power supply circuits
Telecom
Ordering Information
Device
DN2535
Package Options
TO-92
DN2535N3-G
TO-220
DN2535N5-G
BV
DSX
/BV
DGX
(V)
R
DS(ON)
(max)
(Ω)
I
DSS
(min)
(mA)
350
25
150
-G indicates package is RoHS compliant (‘Green’)
Pin Configurations
DRAIN
SOURCE
Absolute Maximum Ratings
Parameter
Drain-to-source voltage
Drain-to-gate voltage
Gate-to-source voltage
Operating and storage
temperature
Soldering temperature*
Value
BV
DSX
BV
DGX
±20V
-55
O
C to +150
O
C
300
O
C
DRAIN
GATE
3-Lead TO-92 (N3)
GATE
SOURCE
DRAIN
3-Lead TO-220 (N5)
Product Marking
DN
2 5 3 5
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Absolute Maximum Ratings are those values beyond which damage to the
device may occur. Functional operation under these conditions is not implied.
Continuous operation of the device at the absolute rating level may affect
device reliability. All voltages are referenced to device ground.
*
Distance of 1.6mm from case for 10 seconds.
3-Lead TO-92 (N3)
L = Lot Number
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
DN2535N5
LLLLLLLLL
YYWW
3-Lead TO-220 (N5)
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com

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