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BAP64-05-TP

Description
ARM Microcontrollers - MCU Cortx-M0+256KB FLASH
Categorysemiconductor    Discrete semiconductor   
File Size471KB,3 Pages
ManufacturerMCC
Websitehttp://www.mccsemi.com
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ARM Microcontrollers - MCU Cortx-M0+256KB FLASH

BAP64-05-TP Parametric

Parameter NameAttribute value
Product CategoryPIN Diodes
ManufacturerMCC
RoHSDetails
Vr - Reverse Voltage175 V
Maximum Diode Capacitance0.52 pF
If - Forward Current100 mA
Vf - Forward Voltage1.1 V
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-23
PackagingReel
PackagingMouseReel
PackagingCut Tape
Pd - Power Dissipation250 mW
Factory Pack Quantity3000
Termination StyleSMD/SMT
Unit Weight0.000282 oz
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
BAP64-05
Features
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisture Sensitivity Level 1
Low diode capacitance
Low diode forward resistance
MARKING: 5K
General
Purpose Pin Diodes
250mW
SOT-23
A
D
Maximum Ratings @ 25°C Unless Otherwise Specified
Parameter
Continuous Reverse Voltage
Forward Current
Power Dissipation(T
A
=90
o
C)
Junction and Storage temperature
Symbol
V
R
I
F
P
D
T
j,
P
stg
Limits
175
100
250
-65~+150
Unit
V
mA
F
C
B
E
mW
o
Thermal Resistance Junction to
Ambient
R
thJA
500
C/W
G
H
J
DIMENSIONS
Electrical Characteristics @ 25°C Unless Otherwise Specified
Parameter
Reverse Voltage
Leakage
Current
Forward voltage
Symbol Min. TYP
I
R
Max. Unit
10
uA
1.0
1.1
V
pF
pF
0.35
40
pF
Conditions
V
R
=175V
V
R
=20V
I
F
=50mA
V
R
=0V,f=1MHz
V
R
=1V,f=1MHz
V
R
=20V,f=1MHz
I
F
=0.5mA, f=100MHz
DIM
A
B
C
D
E
F
G
H
J
K
V
F
C
d1
C
d2
C
d3
r
D
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MAX
.120
.104
.055
.041
.081
.024
.0039
.044
.007
.020
MM
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
Diode capacitance
0.52
0.37
0.23
20
Suggested Solder
Pad Layout
.031
.800
.035
.900
Diode forward
r
D
r
D
10
2
20
3.8
I
F
=1mA , f=100MHz
I
F
=10mA , f=100MHz
resistance
.079
2.000
inches
mm
r
D
Charge carrier
life time
0.7
1.35
I
F
=100mA , f=100MHz
when switched from
.037
.950
.037
.950
τ
L
L
S
1.55
1.4
μS
nH
I
F
=10 mAto I
R
= 6 mA; R
L
=
1
0 ;measured at I
R
=
3mA
0
Ω
I
F
=100mA, f=100MHz
Series inductance
Revision:
A
www.mccsemi.com
1
of
3
2011/01/01

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