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BAW56S135

Description
8-bit Microcontrollers - MCU 32KB In-system Flash 20MHz 1.8V-5.5V
Categorysemiconductor    Discrete semiconductor   
File Size918KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BAW56S135 Overview

8-bit Microcontrollers - MCU 32KB In-system Flash 20MHz 1.8V-5.5V

BAW56S135 Parametric

Parameter NameAttribute value
Product CategoryDiodes - General Purpose, Power, Switching
ManufacturerNXP
RoHSDetails
ProductSwitching Diodes
Mounting StyleSMD/SMT
Package / CaseSOT-363
Peak Reverse Voltage90 V
Max Surge Current4 A
If - Forward Current0.25 A
ConfigurationDouble Dual Common Anode
Recovery Time4 ns
Vf - Forward Voltage1.25 V
Ir - Reverse Current0.5 uA at 80 V
Minimum Operating Temperature- 65 C
Maximum Operating Temperature+ 150 C
PackagingReel
PackagingMouseReel
PackagingCut Tape
Height1 mm (Max)
Length2.2 mm (Max)
Factory Pack Quantity10000
TypeSwitching Diode
Width1.35 mm (Max)
Unit Weight0.000212 oz
BAV756S; BAW56 series
High-speed switching diodes
Rev. 6 — 18 March 2015
Product data sheet
1. Product profile
1.1 General description
High-speed switching diodes, encapsulated in small Surface-Mounted Device (SMD)
plastic packages.
Table 1.
Product overview
Package
Nexperia
BAV756S
BAW56
BAW56M
BAW56S
BAW56T
BAW56W
SOT363
SOT23
SOT883
SOT363
SOT416
SOT323
JEITA
SC-88
-
SC-101
SC-88
SC-75
SC-70
JEDEC
-
Package
configuration
very small
Configuration
quadruple common
anode/common cathode
dual common anode
dual common anode
quadruple common
anode/common anode
dual common anode
dual common anode
Type number
TO-236AB small
-
-
-
-
leadless ultra
small
very small
ultra small
very small
1.2 Features and benefits
High switching speed: t
rr
4 ns
Low leakage current
Small SMD plastic packages
Low capacitance: C
d
2 pF
Reverse voltage: V
R
90 V
AEC-Q101 qualified
1.3 Applications
High-speed switching
General-purpose switching
1.4 Quick reference data
Table 2.
Symbol
Per diode
I
R
V
R
t
rr
[1]
Quick reference data
Parameter
reverse current
reverse voltage
reverse recovery time
[1]
Conditions
V
R
= 80 V
Min
-
-
-
Typ
-
-
-
Max
0.5
90
4
Unit
A
V
ns
When switched from I
F
= 10 mA to I
R
= 10 mA; R
L
= 100
;
measured at I
R
= 1 mA.

BAW56S135 Related Products

BAW56S135 BAW56W135 BAW56235
Description 8-bit Microcontrollers - MCU 32KB In-system Flash 20MHz 1.8V-5.5V Current Sense Resistors - SMD 0.100ohms 1% +/- 75PPM Voltage References Lo-Vtg Adj Precision Shunt Regulator
Configuration Double Dual Common Anode COMMON ANODE, 2 ELEMENTS Dual Common Anode
Product Category Diodes - General Purpose, Power, Switching - Diodes - General Purpose, Power, Switching
Manufacturer NXP - NXP
RoHS Details - Details
Product Switching Diodes - Switching Diodes
Mounting Style SMD/SMT - SMD/SMT
Package / Case SOT-363 - TO-236AB
Peak Reverse Voltage 90 V - 90 V
Max Surge Current 4 A - 4 A
If - Forward Current 0.25 A - 0.215 A
Recovery Time 4 ns - 4 ns
Vf - Forward Voltage 1.25 V - 1.25 V
Ir - Reverse Current 0.5 uA at 80 V - 0.5 uA at 80 V
Minimum Operating Temperature - 65 C - - 65 C
Maximum Operating Temperature + 150 C - + 150 C
Packaging Cut Tape - Cut Tape
Height 1 mm (Max) - 1 mm (Max)
Length 2.2 mm (Max) - 3 mm (Max)
Factory Pack Quantity 10000 - 10000
Type Switching Diode - Switching Diode
Width 1.35 mm (Max) - 1.4 mm (Max)
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