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BLA6H1011-600112

Description
RF MOSFET Transistors TRANS AVIONICS PWR LDMOS
Categorysemiconductor    Discrete semiconductor   
File Size888KB,13 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLA6H1011-600112 Overview

RF MOSFET Transistors TRANS AVIONICS PWR LDMOS

BLA6H1011-600112 Parametric

Parameter NameAttribute value
Product CategoryRF MOSFET Transistors
ManufacturerNXP
RoHSDetails
Transistor PolarityN-Channel
Id - Continuous Drain Current72 A
Vds - Drain-Source Breakdown Voltage100 V
Rds On - Drain-Source Resistance169 mOhms
TechnologySi
Gain17 dB
Output Power600 W
Maximum Operating Temperature+ 150 C
Mounting StyleSMD/SMT
Package / CaseSOT-539A-5
PackagingTube
ConfigurationDual
Operating Frequency1.03 GHz to 1.09 GHz
Factory Pack Quantity20
Vgs - Gate-Source Voltage13 V
Vgs th - Gate-Source Threshold Voltage1.8 V
BLA6H1011-600
LDMOS avionics power transistor
Rev. 02 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
600 W LDMOS pulsed power transistor intended for TCAS and IFF applications in the
1030 MHz to 1090 MHz range.
Table 1.
Test information
Typical RF performance at T
case
= 25
C; t
p
= 50
s;
= 2 %; I
Dq
= 100 mA; in a class-AB production
test circuit.
Mode of operation
pulsed RF
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
f
(MHz)
1030 to 1090
V
DS
(V)
48
P
L
(W)
600
G
p
(dB)
17
D
(%)
52
t
r
(ns)
11
t
f
(ns)
5
1.2 Features and benefits
Typical pulsed RF performance at a frequency of 1030 MHz to 1090 MHz, a supply
voltage of 48 V, an I
Dq
of 100 mA, a t
p
of 50
s
with
of 2 %:
Output power = 600 W
Power gain = 17 dB
Efficiency = 52 %
Easy power control
Integrated ESD protection
High flexibility with respect to pulse formats
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation (1030 MHz to 1090 MHz)
Internally matched for ease of use
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
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