MBRB25H60CT
www.vishay.com
Vishay General Semiconductor
Dual Common Cathode Schottky Rectifier
High Barrier Technology for Improved High Temperature Performance
FEATURES
TO-263AB
K
2
1
MBRB25H60CT
PIN 1
PIN 2
K
HEATSINK
Power pack
Guardring for overvoltage protection
Lower power losses, high efficiency
Low forward voltage drop
Low leakage current
High forward surge capability
High frequency operation
Meets MSL level 1, per J-STD-020, LF maximum peak
of 245 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHE3_A
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
•
•
•
•
•
•
•
•
TYPICAL APPLICATIONS
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
I
R
T
J
max.
Package
Diode variations
2 x 15 A
60 V
150 A
0.60 V
100 μA
175 °C
TO-263AB
Common cathode
For use in low voltage, high frequency rectifier of switching
mode power supplies, freewheeling diodes, DC/DC
converters, or polarity protection application.
MECHANICAL DATA
Case:
TO-263AB
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant, AEC-Q101 qualified
(“_X” denotes revision code, e.g. A, B, ...)
Terminals:
matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs maximum
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Working peak reverse voltage
Maximum DC blocking voltage
Max. average forward rectified current (fig. 1)
Non-repetitive avalanche energy per diode at 25 °C,
I
AS
= 4 A, L = 10 mH
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load per diode
Peak repetitive reverse surge current per diode at t
p
= 2.0 μs, 1 kHz
Peak non-repetitive reverse energy (8/20 μs waveform)
Electrostatic discharge capacitor voltage
Human body model: C = 100 pF, R = 1.5 kΩ
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Isolation voltage from terminal to heatsink t = 1 min
total device
per diode
SYMBOL
V
RRM
V
RWM
V
DC
I
F(AV)
E
AS
I
FSM
I
RRM
E
RSM
V
C
dV/dt
T
J
, T
STG
V
AC
MBRB25H60CT
60
60
60
30
15
80
150
0.5
20
25
10 000
-65 to +175
1500
A
mJ
A
A
mJ
kV
V/μs
°C
V
V
UNIT
Revision: 20-Jun-17
Document Number: 88789
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBRB25H60CT
www.vishay.com
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
I
F
= 15 A
V
F (1)
I
F
= 30 A
Maximum reverse current per diode
I
R (2)
Rated V
R
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
T
J
= 25 °C
T
J
= 125 °C
MBRB25H60CT
TYP.
-
0.56
-
0.68
-
4.0
MAX.
0.70
0.60
0.85
0.72
100
20
μA
mA
V
UNIT
Maximum instantaneous forward
voltage per diode
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: pulse width
≤
40 ms
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Thermal resistance, junction to case per diode
SYMBOL
R
θJC
MBRB25H60CT
1.5
UNIT
°C/W
ORDERING INFORMATION
(Example)
PACKAGE
TO-263AB
TO-263AB
PREFERRED P/N
MBRB25H60CTHE3_A/P
MBRB25H60CTHE3_A/I
(1)
(1)
UNIT WEIGHT (g)
1.35
1.35
PACKAGE CODE
P
I
BASE QUANTITY
50/tube
800/reel
DELIVERY MODE
Tube
Tape and reel
Note
(1)
AEC-Q101 qualified
Revision: 20-Jun-17
Document Number: 88789
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBRB25H60CT
www.vishay.com
Vishay General Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(T
C
= 25 °C unless otherwise noted)
40
100
Instantaneous Reverse Leakage
Current (mA)
Average Forward Current (A)
10
T
J
= 150 °C
T
J
= 125 °C
30
1
20
0.1
0.01
10
0.001
T
J
= 25 °C
0
0
25
50
75
100
125
150
175
0.0001
0
20
40
60
80
100
Case Temperature (°C)
Percent of Rated Peak Reverse Voltage (%)
Fig. 1 - Forward Derating Curve (Total)
Fig. 4 - Typical Reverse Characteristics Per Diode
150
10 000
T
J
= T
J
Max.
8.3 ms
Single
Half
Sine-Wave
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
Peak Forward
Surge
Current (A)
100
75
Junction Capacitance (pF)
1
10
100
125
1000
50
25
0
100
0.1
1
10
100
Number of Cycles at 60 Hz
Reverse Voltage (V)
Fig. 2 - Maximum Non-Repetitive Peak Forward
Surge Current Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
100
T
J
= 150 °C
10
T
J
= 25 °C
1
T
J
= 125 °C
0.1
10
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
1
0.01
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
0.1
0.01
0.1
1
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Revision: 20-Jun-17
Document Number: 88789
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
MBRB25H60CT
www.vishay.com
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Vishay General Semiconductor
D
2
PAK (TO-263AB)
0.411 (10.45)
0.380 (9.65)
0.245 (6.22)
MIN.
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.055 (1.40)
0.047 (1.19)
0.190 (4.83)
0.160 (4.06)
0.055 (1.40)
0.045 (1.14)
Mounting Pad Layout
0.42 (10.66) min.
0.33 (8.38) min.
0.624 (15.85)
0.591 (15.00)
0.670 (17.02)
0.591 (15.00)
0 to 0.01 (0 to 0.254)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.15 (3.81) min.
0.08 (2.032) MIN.
0.105 (2.67)
0.095 (2.41)
0.037 (0.940)
0.027 (0.686)
0.105 (2.67)
0.095 (2.41)
0.205 (5.20)
0.195 (4.95)
0.140 (3.56)
0.110 (2.79)
Revision: 20-Jun-17
Document Number: 88789
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
1
Document Number: 91000