200100U • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • June 4, 2015
1
DATA SHEET • CLA SERIES DIODES
Electrical and Mechanical Specifications
The absolute maximum ratings of the CLA diode series are
specified in Table 1. Electrical specifications are provided in
Table 2. Typical performance characteristics are provided in
Table 1. CLA Series Absolute Maximum Ratings (Note 1)
Parameter
Power dissipation
Symbol
P
DIS
Minimum
Table 3 and Figures 1 through 4. Table 4 identifies the die part
numbers with their corresponding top contact diameters and die
outline drawings.
Typical
Maximum
Maximum T
J
Case Temp
Thermal Re sis tan ce
junction
to
case
Units
W
Reverse voltage
Forward current
Junction temperature
Storage temperature
Electrostatic discharge:
Charged Device Model (CDM), Class 4
Human Body Model (HBM), Class 1C
Machine Model (MM), Class A
V
R
I
F
T
J
T
STG
–65
–65
Minimum rated breakdown voltage
200
+175
+200
V
mA
C
C
1000
1000
150
V
V
V
Note 1:
Exposure to maximum rating conditions for extended periods may reduce device reliability. There is no damage to device with only one parameter set at the limit and all other
parameters set at or below their nominal value. Exceeding any of the limits listed here may result in permanent damage to the device.
CAUTION:
Although this device is designed to be as robust as possible, electrostatic discharge (ESD) can damage this device. This device
must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body
or equipment, which can discharge without detection. Industry-standard ESD precautions should be used at all times.
June 4, 2015 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • 200100U
DATA SHEET • CLA SERIES DIODES
Table 2. CLA Series Electrical Specifications (Notes 1 and 2)
Junction
Junction
Series
Capacitance (C
J
) Capacitance (C
J
) Resistance
@0V
@6V
(R
S
) @ 10 mA
(pF)
(pF)
(Ω)
Typical
0.12
0.20
0.20
0.12
0.20
0.20
0.20
0.60
0.26
0.13
0.23
Maximum
0.10
0.15
0.15
0.10
0.15
0.15
0.15 @ 38 V
0.50 @ 38 V
0.14
0.12
0.20 @ 38 V
Maximum
2.5
2.0
2.0
2.5
2.0
2.0
2.0
1.2
1.5
2.2
1.2
Minority
Carrier
Lifetime (T
L
)
@ 10 mA
(ns)
Typical
5
5
5
7
7
10
50
100
1175
20
300
Thermal Resistance (θ) (Note 3)
1
μs
Pulse
0.01% Duty
Cycle
(C/W)
Typical
0.89
0.42
0.39
0.40
0.51
0.43
0.26
0.14
0.44
0.46
0.37
Breakdown
Voltage (V)
Part Number
CLA4601-000
CLA4602-000
CLA4603-000
CLA4604-000
CLA4605-000
CLA4606-000
CLA4607-000
CLA4608-000
CLA4609-000
CLA4610-000
CLA4611-000
Min to Max
15 to 30
15 to 30
20 to 45
30 to 60
30 to 60
45 to 75
120 to 180
120 to 180
250 (Min.)
80 to 120
120 to 180
I Region
(μm)
Nominal
1
1
1.5
2.0
2.0
2.5
7.0
7.0
20
4.5
12
Average
(C/W)
Maximum
185
177
135
139
139
139
191
106
84
145
103
P
DISS
(W)
Typical
0.49
0.51
0.66
0.65
0.65
0.65
0.47
0.85
1.07
0.62
0.87
Note 1:
Performance is guaranteed only under the conditions listed in this table and is not guaranteed over the full operating or storage temperature ranges. Operation at
elevated temperatures may reduce reliability of the device.
Note 2:
T
OP
= +25
C,
C
J
measured at 1 MHz, R
S
measured at 500 MHz, CW thermal resistance for infinite heat sink, unless otherwise noted.
Note 3:
Thermal resistance is calculated from the measured power dissipation and junction temperature @ f = 2.6 GHz, T
J
max = 175 °C and T
CASE
= 85 °C. Die were
connected in single stage limiter configuration with a 22 nH inductor providing the DC ground return. The diode cathode was attached to the RF ground of a 10 mil thick
Rogers 4003 microstrip test board using 2 mil thick conductive epoxy. The anode contact was connected to the test board input and output RF lines using 0.8 mil Au
bond wire for each connection. The test board included 22 mil coplanar, gold-plated, RF lines and two 50
200100U • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice • June 4, 2015
3
DATA SHEET • CLA SERIES DIODES
Table 3. Typical Performance @ 25
°C
@ 2.6 GHz, Z
0
= 50
Ω
(Note 1)
CW Input Power
for 1 dB
Insertion Loss
(dBm)
12
12
10
12
11
11
26
23
37
22
25
Maximum CW
Input Power
(dBm)
36
36
38
40
40
41
43
43
44
40
40
Maximum
Pulsed Input
Power
(dBm) (Note 2)
65
65
67
70
70
71
73
73
74
57
60
Output @
Maximum
Pulsed Input
(dBm) (Note 2)
21
24
22
24
27
27
39
44
50
32
42
Part Number
CLA4601-000
CLA4602-000
CLA4603-000
CLA4604-000
CLA4605-000
CLA4606-000
CLA4607-000
CLA4608-000
CLA4609-000
CLA4610-000
CLA4611-000
Insertion Loss
@ –10 dBm (dB)
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.2
0.3
0.1
0.3
Recovery Time
(ns) (Note 3)
5
5
5
5
5
5
5
5
5
5
450
Spike Leakage
(ergs) (Note 4)
Note 5
Note 5
Note 5
Note 5
0.08
0.03
0.21
0.15
25.77
Note 5
0.6
Note 1:
Diode chip is mounted on a 0.5 oz Cu PC board using 1 to 2 mils of conductive epoxy. Bond wire connections are made with 0.8 mil Au wire. Limiter configured with shunt connected
diode and 22 nH ground return and 100 pF DC blocking capacitors.
Note 2:
Pulsed power measurements taken at 1 μs pulse width, pulse frequency = 10 kHz, and 0.1% duty cycle.
Note 3:
Recovery time represents the transition time from the high-loss state to the low-loss state following the removal of a high-power input. It is defined as the time from the end of the
high-power pulse to the time when insertion loss has returned to within 3 dB of the quiescent (low-power) state.
Note 4:
Spike Leakage (ergs) = t
s
x P
s
x 10
7
where t
s
is the spike width at the half-power point (in seconds) and P
S
is the maximum spike amplitude in watts.
Note 5:
Not detectable under current test conditions described in Note 2.