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DSC9G02D0L

Description
RF Bipolar Transistors Small Sig Transistor 1.6x1.6mm Flat lead
CategoryDiscrete semiconductor    The transistor   
File Size678KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DSC9G02D0L Overview

RF Bipolar Transistors Small Sig Transistor 1.6x1.6mm Flat lead

DSC9G02D0L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionHALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.015 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)650 MHz
DSC9G02
Silicon NPN epitaxial planar type
For high-frequency amplification
DSC5G02 in SSMini3 type package
Features
High transition frequency f
T
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL: Level 1 compliant)
Unit: mm
Marking Symbol: C5
Packaging
DSC9G02×0L Embossed type (Thermo-compression sealing): 3 000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Collector power dissipation
Junction temperature
Operating ambient temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
opr
T
stg
Rating
30
20
3
15
125
150
–40 to +85
–55 to +150
Unit
V
V
V
mA
mW
°C
°C
°C
1: Base
2: Emitter
3: Collector
Panasonic
JEITA
Code
SSMini3-F3-B
SC-89
SOT-490
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-base voltage (Emitter open)
Emitter-base voltage (Collector open)
Base-emitter voltage
Forward current transfer ratio
*1
Transition frequency
Reverse transfer capacitance
(Common emitter)
Power gain
Noise figure
Symbol
V
CBO
V
EBO
V
BE
h
FE
f
T
C
re
PG
NF
Conditions
I
C
= 10
mA,
I
E
= 0
I
E
= 10
mA,
I
C
= 0
V
CE
= 6 V, I
C
= 1 mA
V
CE
= 6 V, I
C
= 1 mA
V
CE
= 6 V, I
C
= 1 mA
V
CE
= 6 V, I
C
= 1 mA , f = 10.7 MHz
V
CE
= 6 V, I
C
= 1 mA , f = 100 MHz
V
CE
= 6 V, I
C
= 1 mA , f = 100 MHz
65
450
650
0.6
24
3.3
Min
30
3
0.72
260
Typ
Max
Unit
V
V
V
MHz
pF
dB
dB
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *
1: Rank classification
Code
Rank
h
FE
Marking Symbol
C
C
65 to 160
C5C
D
D
100 to 260
C5D
0
No-rank
65 to 260
C5
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: February 2014
Ver. BED
1

DSC9G02D0L Related Products

DSC9G02D0L DSC9G02C0L DSC9G0200L
Description RF Bipolar Transistors Small Sig Transistor 1.6x1.6mm Flat lead DC Power Connectors Power Jacks Bipolar Transistors - BJT SM SIG TRANS FLT LD 1.6x1.6mm
Is it Rohs certified? conform to conform to conform to
Maker Panasonic Panasonic Panasonic
package instruction HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN HALOGEN FREE AND ROHS COMPLIANT, SSMINI3-F3-B, SC-89, 3 PIN
Reach Compliance Code compliant compliant compliant
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.015 A 0.015 A 0.015 A
Collector-emitter maximum voltage 20 V 20 V 20 V
Configuration SINGLE SINGLE SINGLE
highest frequency band VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND VERY HIGH FREQUENCY BAND
JESD-30 code R-PDSO-F3 R-PDSO-F3 R-PDSO-F3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN
surface mount YES YES YES
Terminal form FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 650 MHz 650 MHz 650 MHz
Samacsys Description - DSC9G02C0L, Bipolar Transistor, NPN 15 mA 20 V HFE:65 650 MHz HF Amplifier, 3-Pin SSMini3 F3 B DSC9G0200L, Bipolar Transistor, NPN 15 mA 20 V HFE:65 650 MHz HF Amplifier, 3-Pin SSMini3 F3 B

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