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FDLL4151

Description
Small Signal Diode
CategoryDiscrete semiconductor    diode   
File Size18KB,2 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FDLL4151 Overview

Small Signal Diode

FDLL4151 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
package instructionO-LELF-R2
Contacts2
Reach Compliance Codecompli
ECCN codeEAR99
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeO-LELF-R2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current4 A
Number of components1
Number of terminals2
Maximum operating temperature200 °C
Minimum operating temperature-65 °C
Maximum output current0.2 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)260
Maximum power dissipation0.5 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage75 V
Maximum reverse recovery time0.004 µs
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formWRAP AROUND
Terminal locationEND
Maximum time at peak reflow temperature30
FDLL4151 Small Signal Diode
FDLL4151
Small Signal Diode
General Description
A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless
LL-34 surface mount package. Placement of the expansion gap has no relationship to the location of the cathode terminal which is
indicated by the first color band.
Cathode Band
BLACK
YELLOW
Expansion Gap
Absolute Maximum Ratings *
Symbol
V
RRM
I
F(AV)
I
FSM
T
a
= 25°C unless otherwise noted
Parameter
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
Non-repetitive Peak Forward Current
Pulse Width = 1.0 second
Pulse Width = 1.0microsecond
Storage Temperature Range
Operating Junction Temperature
Value
75
200
1.0
4.0
-65 to +200
-65 to +200
Units
V
mA
A
A
°C
°C
T
STG
T
J
NOTES:
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
1. These ratings are based on a maximum juction temperature of 200 degrees C.
2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJA
Power Dissipation
Thermal Resistance, Junction to Ambient
T
C
= 25°C unless otherwise noted
Parameter
Value
500
350
Units
mW
°C/W
Electrical Characteristics
Symbol
V
R
V
F
I
R
C
T
t
rr1
t
rr2
Breakdown Voltage
Forward Voltage
Reverse Current
Total Capacitance
Reverse Recovery Time
Reverse Recovery Time
Parameter
I
R
= 5µA
I
F
= 50mA
Conditions
Min.
75
Max
1
50
50
4
4
2
Units
V
V
nA
µA
pF
ns
ns
V
R
= 50V
V
R
= 30V, T
A
= 150°C
V
R
= 0, f = 1.0MHz
I
F
= I
R
= 10mA, I
RR
= 1mA
R
L
= 100Ω
V
R
= 6V, I
F
= 10mA, I
RR
= 1mA
R
L
= 100Ω
©2004 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
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