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DMC3035LSD-13

Categorysemiconductor    Discrete semiconductor   
File Size194KB,7 Pages
ManufacturerDiodes
Websitehttp://www.diodes.com/
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DMC3035LSD-13 Parametric

Parameter NameAttribute value
Product CategoryMOSFET
ManufacturerDiodes
RoHSDetails
TechnologySi
Mounting StyleSMD/SMT
Package / CaseSO-8
Number of Channels2 Channel
Transistor PolarityN-Channel, P-Channel
Vds - Drain-Source Breakdown Voltage30 V
Id - Continuous Drain Current6.9 A
Rds On - Drain-Source Resistance35 mOhms, 65 mOhms
Vgs - Gate-Source Voltage20 V
Qg - Gate Charge4.3 nC, 4 nC
Minimum Operating Temperature- 55 C
Maximum Operating Temperature+ 150 C
ConfigurationDual
Channel ModeEnhancement
Forward Transconductance - Min7.7 S, 5.2 S
Height1.5 mm
Length5.3 mm
Pd - Power Dissipation2 W
ProductMOSFET Small Signal
Factory Pack Quantity2500
Transistor Type1 N-Channel, 1 P-Channel
Width4.1 mm
Unit Weight0.030018 oz
DMC3035LSD
COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Please click here to visit our online spice models database.
Features
Complementary Pair MOSFETs
Low On-Resistance
N-Channel: 35mΩ @ 10V
61mΩ @ 4.5V
P-Channel: 65mΩ @ -10V
115mΩ @ -4.5V
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 6
Ordering Information: See Page 6
Weight: 0.072g (approximate)
NE W PRODUCT
SOP-8L
D
2
D
1
S2
G2
S1
G1
TOP VIEW
TOP VIEW
Internal Schematic
D2
D2
D1
D1
G
2
G
1
S
2
N-Channel MOSFET
S
1
P-Channel MOSFET
Maximum Ratings N-CHANNEL
Characteristic
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
GSS
T
A
= 25°C
T
A
= 70°C
I
D
I
DM
Value
30
±20
6.9
5.8
30
Unit
V
V
A
A
Maximum Ratings P-CHANNEL
Characteristic
Drain Source Voltage
Gate-Source Voltage
Drain Current (Note 1)
Pulsed Drain Current (Note 4)
@T
A
= 25°C unless otherwise specified
Symbol
V
DSS
V
GSS
T
A
= 25°C
T
A
= 70°C
I
D
I
DM
Value
-30
±20
-5
-4.2
-20
Unit
V
V
A
A
Thermal Characteristics
Power Dissipation (Note 1)
@T
A
= 25°C unless otherwise specified
Symbol
P
D
R
θ
JA
T
j
, T
STG
Value
2
62.5
-55 to +150
Unit
W
°C/W
°C
Characteristic
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
Notes:
1.
2.
3.
4.
Device mounted on 2oz. copper pads on 2” x 2” FR4 PCB.
No purposefully added lead.
Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
Repetitive rating, pulse width limited by junction temperature.
DMC3035LSD
Document number: DS31312 Rev. 3 - 2
1 of 7
www.diodes.com
October 2008
© Diodes Incorporated
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