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FQU7P06TU

Description
MOSFET 60V P-Channel QFET
CategoryDiscrete semiconductor    The transistor   
File Size471KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FQU7P06TU Overview

MOSFET 60V P-Channel QFET

FQU7P06TU Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-251
package instructionIPAK-3
Contacts3
Reach Compliance Codenot_compliant
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)90 mJ
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (Abs) (ID)5.4 A
Maximum drain current (ID)5.4 A
Maximum drain-source on-resistance0.451 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-251
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeP-CHANNEL
Maximum power dissipation(Abs)28 W
Maximum pulsed drain current (IDM)21.6 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
FQD7P06 P-Channel QFET
®
MOSFET
April 2013
FQD7P06
P-Channel QFET
®
MOSFET
- 60 V, - 5.4 A, 450 m
Description
This P-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor
®
’s proprietary
planar stripe and DMOS technology. This advanced
MOSFET technology has been especially tailored to reduce
on-state resistance, and to provide superior switching
performance and high avalanche energy strength. These
devices are suitable for switched mode power supplies,
audio amplifier, DC motor control, and variable switching
power applications.
D
G
G
S
Features
• - 5.4 A, - 60 V, R
DS(on)
= 450 m (Max.) @ V
GS
= - 10 V,
I
D
= - 2.7 A
• Low Gate Charge (Typ. 6.3 nC)
• Low Crss (Typ. 25 pF)
• 100% Avalanche Tested
S
▶ ▲
D-PAK
D
Absolute Maximum Ratings
Symbol
V
DSS
I
D
I
DM
V
GSS
E
AS
I
AR
E
AR
dv/dt
P
D
T
C
= 25°C unless otherwise noted
Parameter
Drain-Source Voltage
- Continuous (T
C
= 25°C)
Drain Current
- Continuous (T
C
= 100°C)
Drain Current
- Pulsed
(Note 1)
FQD7P06
-60
-5.4
-3.42
-21.6
25
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (T
A
= 25°C) *
Power Dissipation (T
C
= 25°C)
90
-5.4
2.8
-7.0
2.5
28
0.22
-55 to +150
300
T
J
, T
STG
T
L
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
Thermal Characteristics
Symbol
R
JC
R
JA
R
JA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Junction-to-Ambient *
Thermal Resistance, Junction-to-Ambient, Max.
FQD7P06
4.5
50
110
Unit
°C/W
°C/W
°C/W
* When mounted on the minimum pad size recommended (PCB Mount)
©2001 Fairchild Semiconductor Corporation
FQD7P06 Rev. C0
1
www.fairchildsemi.com
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