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2SC5439F

Description
Bipolar Transistors - BJT NPN 450V 8A Transistor
Categorysemiconductor    Discrete semiconductor   
File Size146KB,5 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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Bipolar Transistors - BJT NPN 450V 8A Transistor

2SC5439F Parametric

Parameter NameAttribute value
Product CategoryBipolar Transistors - BJT
ManufacturerToshiba Semiconductor
RoHSDetails
Mounting StyleThrough Hole
Package / CaseTO-220FP-3
Transistor PolarityNPN
ConfigurationSingle
Collector- Emitter Voltage VCEO Max450 V
Collector- Base Voltage VCBO1 kV
Emitter- Base Voltage VEBO9 V
Maximum DC Collector Current8 A
Maximum Operating Temperature+ 150 C
Height8.1 mm
Length10 mm
PackagingBulk
Pd - Power Dissipation2000 mW
Factory Pack Quantity50
Width4.5 mm
Unit Weight0.081130 oz
2SC5439
TOSHIBA Transistor
Silicon NPN Triple Diffused Type
2SC5439
Switching Regulator Applications
High-Voltage Switching Applications
DC-DC Converter Applications
Inverter Lighting Applications
Unit: mm
Excellent switching times: t
r
= 0.2
μs
(typ.), t
f
= 0.15
μs
(typ.)
High collector breakdown voltage: V
CEO
= 450 V
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature range
Ta = 25°C
Tc = 25°C
DC
Pulse
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
C
T
j
T
stg
Rating
1000
450
9
8
16
1
2.0
30
150
−55
to 150
Unit
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
SC-67
2-10R1A
Weight: 1.7 g (typ.)
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
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