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BC857BDW1T1

Description
Bipolar Transistors - BJT 100mA 50V Dual PNP
CategoryDiscrete semiconductor    The transistor   
File Size118KB,7 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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Bipolar Transistors - BJT 100mA 50V Dual PNP

BC857BDW1T1 Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Contains lead
MakerON Semiconductor
Parts packaging codeSC-88
package instructionCASE 419B-02, SC-70, SC-88, 6 PIN
Contacts6
Manufacturer packaging code419B-02
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)220
JESD-30 codeR-PDSO-G6
JESD-609 codee0
Humidity sensitivity level1
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typePNP
Maximum power dissipation(Abs)0.38 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
BC856BDW1T1G,
SBC856BDW1T1G Series,
BC857BDW1T1G,
SBC857BDW1T1G Series,
BC858CDW1T1G Series
Dual General Purpose
Transistors
PNP Duals
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT−363/SC−88 which is
designed for low power surface mount applications.
Features
(3)
http://onsemi.com
SOT−363/SC−88
CASE 419B
STYLE 1
(2)
(1)
S Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant*
MAXIMUM RATINGS
Rating
Collector
−Emitter
Voltage
BC856, SBC856
BC857, SBC857
BC858
Collector
−Base
Voltage
BC856, SBC856
BC857, SBC857
BC858
Emitter
−Base
Voltage
Collector Current
−Continuous
Collector Current
Peak
Symbol
V
CEO
Value
−65
−45
−30
−80
−50
−30
−5.0
−100
−200
Unit
V
Q
1
Q
2
(4)
(5)
(6)
MARKING DIAGRAM
6
3x MG
G
V
3x
V
mAdc
mAdc
M
G
1
= Specific Device Code
x = B, F, G, or L
(See Ordering Information)
= Date Code
= Pb−Free Package
V
CBO
V
EBO
I
C
I
C
(Note: Microdot may be in either location)
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation Per Device
FR−5 Board (Note 1)
T
A
= 25°C
Derate Above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage Temperature
Range
Symbol
P
D
Max
380
250
3.0
328
−55
to +150
Unit
mW
mW/°C
mW/°C
°C/W
°C
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
R
qJA
T
J
, T
stg
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−5 = 1.0 x 0.75 x 0.062 in
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2013
June, 2013
Rev. 9
1
Publication Order Number:
BC856BDW1T1/D
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