MGA-83563
+22 dBm P
SAT
3V Power Amplifier
for 0.5 – 6 GHz Applications
Data Sheet
Description
Avago’s MGA-83563 is an easy-to-use GaAs RFIC amplifier
that offers excellent power output and efficiency. This
part is targeted for 3V applications where constant-en-
velope modulation is used. The output of the amplifier is
matched internally to 50Ω. However, an external match
can be added for maximum efficiency and power out
(PAE = 37%, P
o
= 22 dBm). The input is easily matched
to 50 Ω.
Due to the high power output of this device, it is recom-
mended for use under a specific set of operating condi-
tions. The thermal sections of the Applications Informa-
tion explain this in detail.
The circuit uses state-of-the-art PHEMT technology with
proven reliability. On-chip bias circuitry allows operation
from single supply voltage.
Features
x
Lead-free Option Available
x
+22 dBm P
SAT
at 2.4 GHz, 3.0 V
+23 dBm P
SAT
at 2.4 GHz, 3.6V
x
22 dB Small Signal Gain at 2.4 GHz
x
Wide Frequency Range 0.5 to 6 GHz
x
Single 3V Supply
x
37% Power Added Efficiency
x
Ultra Miniature Package
Applications
x
Amplifier for Driver and Output Applications
Surface Mount Package
SOT-363 (SC-70)
Equivalent Circuit
(Simplified)
V
d1
OUTPUT
and V
d2
INPUT
BIAS
Pin Connections and Package Marking
BIAS
GROUND
V
d1
GND
INPUT
1
2
3
6
5
4
OUTPUT
and V
d2
GND
GND
Note:
Package marking provides orientation and identification;
“x” is date code.
83x
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Human Body Model (Class 0)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
MGA-83563 Absolute Maximum Ratings
Symbol
V
P
in
T
ch
T
STG
Parameter
Maximum DC Supply Voltage
CW RF Input Power
Channel Temperature
Storage Temperature
Units
V
dBm
°C
°C
Absolute
Maximum
[1]
4
+13
165
-65 to 150
Thermal Resistance
[2]
:
T
ch to c
= 175°C/W
Notes:
1. Operation of this device above any one
of these limits may cause permanent
damage.
2. T
C
= 25°C (T
C
is defined to be the tempera-
ture at the package pins where contact is
made to the circuit board).
3.0V
20
pF
2.2
nH
18
nH
50
pF
1
pF
RF
OUTPUT
POWER DISSIPATED AS HEAT (mW)
Pd = (VOLTAGE) x (CURRENT) – (Pout)
800
700
600
500
400
300
200
100
0
10
30
50
70
90
110 130 150
1
83
RF 1.2
nH
INPUT
x
10
6
H
rs
M
F
TT
Figure 1. MGA-83563 Final Production Test Circuit.
V
d
20
pF
L1
Tuner
Bias
Tee
RF
OUTPUT
CASE TEMPERATURE (C)
Temperature/Power
Derating Curve.
83
Tuner
RF
INPUT
Circuit A: L1 = 2.2
nH for
0.1 to 3 GHz
Circuit
B:
L1 = 0
nH
(capacitor
as close as possible) for
3 to 6 GHz
Figure 2. MGA-83563 Test Circuit for Characterization.
2
MGA-83563 Electrical Specifications,
V
d
= 3 V, T
C
= 25°C, using test circuit of Figure 2, unless noted.
Symbol
P
SAT
PAE
I
d
Gain
Parameters and Test Conditions
Saturated Output
Device Current
[3,5]
Small Signal Gain
f = 0.9 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.4 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 6.0 GHz
f = 0.9 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.4 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 6.0 GHz
f = 0.9 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.4 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 6.0 GHz
Power
[3]
f = 2.4 GHz
f = 2.4 GHz
Power Added Efficiency
[3]
Units
dBm
%
mA
dB
Min.
20.5
25
Typ.
22.4
37
152
20
22
23
22
22
19
17
20.9
21.7
21.8
22
21.9
19.7
18.2
41
41
40
37
32
18
14
19.1
19.7
19.7
19.2
18.1
16
15
3.5
2.6
2.3
1.4
2.5
3.5
4.5
Max.
Std.
Dev.
[4]
0.75
2.5
200
12.4
P
SAT
Saturated Output Power
dBm
PAE
Power Added Efficiency
%
P
1 dB
Output Power at 1 dB Gain Compression
[5]
f = 0.9 GHz
f = 1.5 GHz
f = 2.0 GHz
f = 2.4 GHz
f = 4.0 GHz
f = 5.0 GHz
f = 6.0 GHz
Input VSWR into 50 Ω
Circuit A
Circuit B
f = 0.9 to 1.7 GHz
f = 1.8 to 3.0 GHz
f = 3.0 to 6.0 GHz
f = 0.9 to 2.0 GHz
f = 2.0 to 3.0 GHz
f = 3.0 to 4.0 GHz
f = 4.0 to 6.0 GHz
f = 0.9 to 3.0 GHz
f = 3.0 to 6.0 GHz
f = 0.9 GHz to 6.0 GHz
dBm
VSWR
in
VSWR
out
Output VSWR into 50 Ω
Circuit A
Circuit B
ISOL
IP
3
Isolation
Third Order Intercept Point
dB
dBm
-38
-30
29
Notes:
3. Measured using the final test circuit of Figure 1 with an input power of +4 dBm.
4. Standard Deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial characteriza-
tion of this product, and is intended to be used as an estimate for distribution of the typical specification.
5. For linear operation, refer to thermal sections in the Applications section of this data sheet.
3
MGA-83563 Typical Performance,
V
d
= 3 V, T
C
= 25°C, using test circuit of Figure 2, unless noted.
26
24
22
22
22
24
24
GAIN (dB)
20
18
16
14
12
10
0
3.3V
3.0V
2.7V
1
2
3
4
5
6
20
P
SAT
(dBm)
2.7V
3.0V
3.3V
3.6V
0
1
2
3
4
5
6
P
1dB
(dBm)
20
18
18
2.7V
3.0V
3.3V
3.6V
0
1
2
3
4
5
6
16
16
14
FREQUENCY (GHz)
FREQUENCY (GHz)
14
FREQUENCY (GHz)
Figure 3. Tuned Gain vs. Frequency and Voltage.
Figure 4. Output Power at 1 dB Compression vs.
Frequency and Voltage.
Figure 5. Saturated Output Power (+4 dBm in) vs.
Frequency and Voltage
.
26
24
24
12
GAIN (dB)
20
18
16
14
12
10
0
-40C
+25C
+85C
1
2
3
4
5
6
20
NOISE FIGURE (dB)
-40C
+25C
+85C
0
1
2
3
4
5
6
22
OUTPUT POWER (dBm)
22
10
8
18
6
-40C
+25C
+85C
0
1
2
3
4
5
6
16
4
14
FREQUENCY (GHz)
FREQUENCY (GHz)
2
FREQUENCY (GHz)
Figure 6. Gain vs. Frequency and Temperature.
Figure 7. Saturated Output Power (+4 dBm in) vs.
Frequency and Temperature.
Figure 8. Noise Figure vs. Frequency and Temperature.
10
200
180
190
50
I
d
DEVICE CURRENT, I
d
(mA)
8
160
140
120
100
80
60
40
20
0
-40C
+25C
+85C
0
1
2
VOLTAGE (V)
3
4
DEVICE CURRENT, I
d
(mA)
170
40
INPUT
4
130
PAE
20
2
OUTPUT
0
0
1
2
3
4
5
6
FREQUENCY (GHz)
110
90
-14
10
0
6
-10
-6
-2
2
INPUT POWER (dBm) @ 2.4 GHz
Figure 9. Input and Output VSWR vs. Frequency.
Figure 10. Supply Current vs. Voltage and Temperature.
P
in
= -27 dBm.
Figure 11. Device Current and Power Added Efficiency vs.
Input Power.
Note: Figure 1 test circuit.
4
PAE (%)
VSWR
6
150
30
MGA-83563 Typical Performance,
continued. V
d
= 3 V, T
C
= 25°C, using test circuit of Figure 2, unless noted.
24
22
2.7V
3.0V
3.3V
3.6V
33
2.7V
3.0V
3.3V
3.6V
50
45
THIRD ORDER INTERCEPT (dBm)
32
31
30
29
28
27
26
OUTPUT POWER (dBm)
20
18
16
14
12
10
-10
PAE (%) and IP
3
(dBm)
-10
-6
-2
2
6
40
35
30
25
20
0
1
2
3
4
5
6
-8
-6
-4
-2
0
2
4
6
25
-14
INPUT POWER (dBm) @ 2.4 GHz
INPUT POWER (dBm) @ 2.4 GHz
FREQUENCY (GHz)
Figure 12. Output Power vs. Input Power and
Voltage.
Note: Figure 1 test circuit.
Figure 13. Third Order Intercept vs. Input Power
and Voltage.
Note: Figure 1 test circuit.
Figure 14. Power Added Efficiency and Third Order
Intercept vs. Frequency (V
d
= 3.6 V).
-20
-25
ISOLATION (dB)
-30
-35
-40
-45
-50
0
1
2
3
4
5
6
FREQUENCY (GHz)
Figure 15. Isolation vs. Frequency.
5
京公网安备 11010802033920号
EEWORLD
