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FEPB16DT

Description
16 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB
Categorysemiconductor    Discrete semiconductor   
File Size84KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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FEPB16DT Overview

16 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB

NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
FEPB16AT THRU FEPB16JT
FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage -
50 to 600 Volts
TO-263AB
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
0.047 (1.19)
0.055 (1.40)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
Forward Current -
16.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Dual rectifier construction, positive centertap
Glass passivated chip junctions
Low power loss
Low forward voltage, high current capability
High surge current capability
Superfast recovery times for high efficiency
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
0.320 (8.13)
0.360 (9.14)
1
K
2
0.575 (14.60)
0.625 (15.88)
SEATING
PLATE
-T-
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.027 (0.686)
0.037 (0.940)
0.080 (2.03)
0.110 (2.79)
0.095 (2.41)
0.100 (2.54)
MECHANICAL DATA
Case:
JEDEC TO-263AB molded plastic body
Terminals:
Plated leads solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:
0.08 ounce, 2.24 grams
PIN 1
K - HEATSINK
PIN 2
Dimensions are in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
FEPB
SYMBOLS 16AT
FEPB
16BT
FEPB
16CT
FEPB
16DT
FEPB FEPB
16FT 16GT
FEPB
16HT
FEPB
16JT
UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) at T
C
=100°C per leg
Maximum instantaneous forward voltage per leg
at 8.0A
Maximum DC reverse current
at rated DC blocking voltage per leg
Maximum reverse recovery time
(NOTE 1)
per leg
Typical
J
unction
C
apacitance per leg
(NOTE 2)
Typical thermal resistance
(NOTE 3)
Operating junction and storage temperature range
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to case per leg mounted on heatsink
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
150
105
150
200
140
200
300
210
300
400
280
400
500
350
500
600
420
600
Volts
Volts
Volts
Amps
16.0
I
FSM
200.0
Amps
V
F
I
R
t
rr
C
J
R
ΘJC
T
J,
T
STG
0.95
10.0
500.0
35.0
85.0
2.2
1.3
1.5
Volts
µA
T
C
=25°C
T
C
=100°C
50.0
60.0
ns
pF
°C/W
°C
-55 to +150
4/98

FEPB16DT Related Products

FEPB16DT FEPB16AT FEPB16BT FEPB16CT FEPB16FT FEPB16GT FEPB16HT FEPB16JT
Description 16 A, 200 V, SILICON, RECTIFIER DIODE, TO-263AB 16 A, 50 V, SILICON, RECTIFIER DIODE, TO-263AB 16 A, 100 V, SILICON, RECTIFIER DIODE, TO-263AB 16 A, 150 V, SILICON, RECTIFIER DIODE, TO-263AB 16 A, 300 V, SILICON, RECTIFIER DIODE, TO-263AB 16 A, 400 V, SILICON, RECTIFIER DIODE, TO-263AB 16 A, 500 V, SILICON, RECTIFIER DIODE, TO-263AB 16 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB

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