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FES3G

Description
3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB
Categorysemiconductor    Discrete semiconductor   
File Size42KB,2 Pages
ManufacturerETC
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FES3G Overview

3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB

FES3A ........ FES3J
3 Amp. Surface Mounted Glass Passivated Ultrafast Recovery Rectifier
Dimensions in mm.
7.8
± 0.3
CASE:
SMC/DO-214 AB
Voltage
50 to 600 V
Current
3.0 A
®
1.25
± 0.25
1.25
± 0.25
Week code
Glass passivated junction
High current capability
The plastic material carries U/L 94 V-0
Low profile package
Easy pick and place
High temperature soldering 260 ºC 10 sec
2.8
7.2
Year code
Type No. Closs
Standard soldering pad
MECHANICAL DATA
Terminals: Solder plated, solderable per IEC 68-2-20.
Standard Packaging: 8 mm. tape (EIA-RS-481).
Weight: 1.12 g.
Maximum Ratings and Electrical Characteristics at 25 ºC
FES3A
FES3B
W2
FES3D
W3
FES3F
W4
FES3G
W5
FES3J
W6
Marking Code
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
T
rr
C
j
R
th (j-l)
R
th (j-a)
T
j -
T
stg
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Forward current at T
L
= 100 ºC
W1
50
35
50
100
70
100
200
140
200
300
210
300
3.0 A
400
280
400
600
420
600
8.3 ms. peak forward surge current
(Jedec Method)
100 A
0.95 V
10 µA
500 µA
50 ns
45 pF
12 ºC/W
47 ºC/W
-55 to + 150 ºC
1.25 V
Maximum Instantaneous Forward
Voltage at 3.0 A
Maximum DC Reverse Current
at Rated DC Blocking Voltage
Ta = 25 ºC
Ta = 100 ºC
Maximum Reverse Recovery Time (0.5/1/0.25A)
Typical Junction Capacitance (1MHz; -4V)
Typical Thermal Resistance
(5x5 mm
2
x 130 µ Copper Area)
Operating Junction and Storage
Temperature Range
Jun - 03

FES3G Related Products

FES3G FES3J FES3B FES3A FES3F FES3D
Description 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 600 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 300 V, SILICON, RECTIFIER DIODE, DO-214AB 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-214AB
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