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FES8GT

Description
8 A, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size67KB,2 Pages
ManufacturerGE Sensing ( Amphenol Advanced Sensors )
Websitehttp://www.vishay.com/
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FES8GT Overview

8 A, SILICON, RECTIFIER DIODE

FES8AT THRU FES8JT
FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage -
50 to 600 Volts
TO-220AC
0.185 (4.70)
0.415 (10.54) MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
DIA.
0.148 (3.74)
0.055 (1.39)
0.045 (1.14)
0.175 (4.44)
Forward Current -
8.0 Amperes
FEATURES
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Glass passivated chip junction
Low leakage, high voltage
High surge current capability
Superfast recovery time, for high efficiency
High temperature soldering guaranteed:
250°C, 0.16" (4.06mm) from case for 10 seconds
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
0.560 (14.22)
0.530 (13.46)
0.410 (10.41)
0.390 (9.91)
PIN
1
0.160 (4.06)
0.140 (3.56)
0.560 (14.22)
0.530 (13.46)
2
0.635 (16.13)
0.625 (15.87)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.110 (2.79)
0.100 (2.54)
MECHANICAL DATA
Case:
JEDEC TO-220AC fully overmolded plastic body over
passivated chip
Terminals:
Plated lead solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Mounting Torque:
5 in. - lbs. max.
Weight:
0.064 ounce, 1.81 grams
0.105 (2.67)
0.095 (2.41)
0.037 (0.94)
0.027 (0.68)
0.022 (0.56)
0.014 (0.36)
PIN 1
0.205 (5.20)
0.195 (4.95)
PIN 2
CASE
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
FES
8AT
FES
8BT
FES
8CT
FES
8DT
FES
8FT
FES
8GT
FES
8HT
FES
8JT
UNITS
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method)
Maximum instantaneous forward voltage at 8.0A
Maximum DC reverse current
at rated DC blocking voltage
T
C
=25°C
at T
C
=100°C
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
150
105
150
200
140
200
8.0
300
210
300
400
280
400
500
350
500
600 Volts
420 Volts
600 Volts
Amps
I
FSM
V
F
I
R
t
rr
C
J
R
ΘJA
R
ΘJC
T
J
, T
STG
35.0
0.95
125.0
1.3
10.0
500.0
50.0
85.0
15.0
2.2
-65 to +150
60.0
1.5
Amps
Volts
µA
ns
pF
°C/W
°C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
(NOTE 4)
Operating junction and storage temperature range
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to ambient in free air, no heatsink
(4) Thermal resistance from junction to case mounted on heatsink
4/98

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FES8GT FES8 FES8AT FES8BT FES8CT FES8FT FES8DT FES8HT FES8JT
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