NEW PRODUCT
NEW PRODUCT
NEW PRODUCT
FESB16AT THRU FESB16JT
FAST EFFICIENT PLASTIC RECTIFIER
Reverse Voltage -
50 to 600 Volts
TO-263AB
0.380 (9.65)
0.420 (10.67)
0.245 (6.22)
MIN
K
0.047 (1.19)
0.055 (1.40)
0.160 (4.06)
0.190 (4.83)
0.045 (1.14)
0.055 (1.40)
Forward Current -
16.0 Amperes
FEATURES
♦
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
♦
Glass passivated chip junction
♦
Low power loss
♦
Low forward voltage, high current capability
♦
High surge current capability
♦
Superfast recovery time, for high efficiency
♦
High temperature soldering in accordance with
CECC 802 / Reflow guaranteed
0.320 (8.13)
0.360 (9.14)
1
K
2
0.575 (14.60)
0.625 (15.88)
SEATING
PLATE
-T-
0.090 (2.29)
0.110 (2.79)
0.018 (0.46)
0.025 (0.64)
0.027 (0.686)
0.037 (0.940)
0.080 (2.03)
0.110 (2.79)
0.095 (2.41)
0.100 (2.54)
MECHANICAL DATA
Case:
JEDEC TO-263AB molded plastic body over
passivated chips
Terminals:
Plated lead solderable per MIL-STD-750,
Method 2026
Polarity:
As marked
Mounting Position:
Any
Weight:
0.08 ounce, 2.24 grams
PIN 1
K - HEATSINK
PIN 2
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
FESB
SYMBOLS 16AT
FESB
16BT
FESB
16CT
FESB
16DT
FESB
16FT
FESB FESB
16GT 16HT
FESB
16JT UNITS
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
C
=100°C
Peak forward surge current
8.3ms single half sine-wave superimposed
on rated load (JEDEC Method) at T
C
=100°C
Maximum instantaneous forward voltage at 16A
Maximum DC reverse current
at rated DC blocking voltage
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
Operating and storage temperature range
T
C
=25°C
T
C
=100°C
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
150
105
150
200
140
200
300
210
300
400
280
400
500
350
500
600 Volts
420 Volts
600 Volts
Amps
16.0
I
FSM
V
F
I
R
t
rr
C
J
R
ΘJC
T
J
, T
STG
35.0
0.975
250.0
1.3
10.0
500.0
50.0
175.0
1.2
-65 to +150
145.0
1.5
Amps
Volts
µA
ns
pF
°C/W
°C
Maximum reverse recovery time
(NOTE1)
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MH
Z
and applied reverse voltage of 4.0 Volts
(3) Thermal resistance from junction to case
4/98
RATINGS AND CHARACTERISTICS CURVES FESB16AT THRU FESB16JT
FIG. 1 - FORWARD CURRENT DERATING CURVE
RESISTIVE OR INDUCTIVE LOAD
PEAK FORWARD SURGE CURRENT,
AMPERES
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
20
AVERAGE FORWARD CURRENT,
AMPERES
300
250
200
150
100
50
0
16
12
8.0
8.3ms SINGLE HALF SINE WAVE
(JEDEC Method)
T
C
=100°C
4.0
0
0
50
100
150
1
10
NUMBER OF CYCLES AT 60 H
Z
100
CASE TEMPERATURE, °C
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, AMPERES
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
80
1,000
T
J
=125°C
10
50-200V
300-400V
500-600V
INSTANTANEOUS REVERSE LEAKAGE CURRENT,
MICROAMPERES
100
T
J
=
25°
C
1
10
T
J
=
100
°C
T
J
= 25°C
PULSE WIDTH = 300µs
1% DUTY CYCLE
0.1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1
50-200V
300-600V
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
25°
T
J
=
C
0.1
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
1,000
JUNCTION CAPACITANCE, pF
T
J
=25°C
f=1.0 MH
Z
100
50-400V
500-600V
10
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
Analog electronics
京公网安备 11010802033920号
EEWORLD
