Ordering number : ENN6544
3LN01N
N-Channel Silicon MOSFET
3LN01N
Ultrahigh-Speed Switching Applications
Features
•
•
•
Package Dimensions
unit : mm
2178
[3LN01N]
5.0
4.0
4.0
Low ON-resistance.
Ultrahigh-speed switching.
2.5V drive.
0.45
0.5
0.6
2.0
5.0
0.45
0.44
1
2
3
14.0
1 : Source
2 : Drain
3 : Gate
1.3
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
1.3
SANYO : NP
Ratings
30
±10
0.15
0.6
0.4
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Conditions
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
Conditions
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=100µA
VDS=10V, ID=80mA
Ratings
min
30
10
±10
0.4
0.15
0.22
1.3
typ
max
Unit
V
µA
µA
V
S
Marking : YA
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71400 TS IM TA-1991 No.6544-1/4
3LN01N
Continued from preceding page.
Parameter
Symbol
RDS(on)1
RDS(on)2
RDS(on)3
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
Conditions
ID=80mA, VGS=4V
ID=40mA, VGS=2.5V
ID=10mA, VGS=1.5V
VDS=10V, f=1MHz
VDS=10V, f=1MHz
VDS=10V, f=1MHz
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
See specified Test Circuit
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
VDS=10V, VGS=10V, ID=150mA
IS=150mA, VGS=0
Ratings
min
typ
2.9
3.7
6.4
7.0
5.9
2.3
19
65
155
120
1.58
0.26
0.31
0.87
1.2
max
3.7
5.2
12.8
Unit
Ω
Ω
Ω
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
Static Drain-to-Sourse On-State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ”Miller” Charge
Diode Forward Voltage
Switching Time Test Circuit
4V
0V
VIN
VIN
VDD=15V
ID=80mA
RL=187.5Ω
PW=10µs
D.C.≤1%
D
G
VOUT
3LN01N
P.G
50Ω
S
0.16
0.14
0.12
0.10
0.08
ID -- VDS
2.5
V
0.30
ID -- VGS
--25
Ta=
°
C
75
°
C
2.5
3.5V
4.0V
6.0
V
2
.0V
0.25
VDS=10V
3.0
V
Drain Current, ID -- A
Drain Current, ID -- A
0.20
0.15
VGS=1.5V
0.06
0.04
0.02
0
0
0.2
0.4
0.6
0.8
1.0
IT00029
0.10
0.05
0
0
0.5
1.0
1.5
2.0
3.0
IT00030
Drain-to-Source Voltage, VDS -- V
10
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
10
RDS(on) -- ID
Ta=25°C
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
7
Static Drain to Source
On-State Resistance, RDS(on) --
Ω
9
8
7
6
5
4
3
2
1
0
0
1
2
3
4
5
6
7
8
9
10
VGS=4V
5
Ta=75°C
3
80mA
ID=40mA
25°C
--25°C
2
1.0
0.01
25
°
C
3
5
IT00032
2
3
5
7
0.1
2
Gate-to-Source Voltage, VGS -- V
IT00031
Drain Current, ID -- A
No.6544-2/4
3LN01N
10
RDS(on) -- ID
VGS=2.5V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
100
7
5
3
2
RDS(on) -- ID
VGS=1.5V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
7
5
Ta=75°C
25°C
3
--25°C
10
7
5
3
2
Ta=75°C
--25°C
25°C
2
1.0
0.01
2
3
5
7
0.1
2
3
5
IT00033
1.0
0.001
2
3
5
7
0.01
2
3
5
IT00034
Drain Current, ID -- A
7
RDS(on) -- Ta
Forward Transfer Admittance,
yfs
-- S
Drain Current, ID -- A
1.0
7
5
3
2
yfs
-- ID
VDS=10V
Static Drain-to-Source
On-State Resistance, RDS(on) --
Ω
6
5
4
3
5V
=2.
GS
A, V
4.0V
0m
=4
S=
ID
, VG
mA
=80
ID
--2
Ta=
5
°
C
75
°
C
0.1
7
5
3
2
25
°
C
2
1
0
--60
--40
--20
0
20
40
60
80
100
120
140
160
Ambient Temperature, Ta --
°C
1.0
7
5
0.01
0.01
2
3
5
7
0.1
2
3
5
IT00036
IT00035
1000
IF -- VSD
VGS=0
Switching Time, SW Time -- ns
Drain Current, ID -- A
SW Time -- ID
VDD=15V
VGS=4V
7
5
3
2
Forward Current, IF -- A
3
2
td(off)
tf
Ta
=
°
C
75
°
C
25
--2
5
°
C
0.1
7
5
3
2
100
7
5
3
2
tr
td(on)
0.01
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
IT00037
10
0.01
2
3
5
7
0.1
2
IT00038
Diode Forward Voltage, VSD -- V
100
7
5
Drain Current, ID -- A
10
Ciss, Coss, Crss -- VDS
f=1MHz
Gate-to-Source Voltage, VGS -- V
VGS -- Qg
VDS=10V
ID=150mA
9
8
7
6
5
4
3
2
1
Ciss, Coss, Crss -- pF
3
2
10
7
5
3
2
Ciss
Coss
Crss
1.0
0
2
4
6
8
10
12
14
16
18
20
0
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
Drain-to-Source Voltage, VDS -- V
IT00039
Total Gate Charge, Qg -- nC
IT00040
No.6544-3/4
3LN01N
0.5
PD -- Ta
Allowable Power Dissipation, PD -- W
0.4
0.3
0.2
0.1
0
0
20
Ambient Temperature, Ta --
°C
40
60
80
100
120
140
160
IT01963
Note on usage : Since the 3LN01N is designed for high-speed switching applications, please avoid using
this device in the vicinity of highly charged objects.
Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.
This catalog provides information as of July, 2000. Specifications and information herein are subject
to change without notice.
PS No.6544-4/4
京公网安备 11010802033920号
EEWORLD
