MOS Transistor (Columbia University, English subtitles)

The course aims to explain how MOS transistors work and how to model them. The knowledge provided in this course is essential not only for device modelers, but also for designers of high-performance circuits.

• Chapter 1：About_This_Course (13 minutes and 44 seconds)

• Chapter 2：Intuitive_Overview_of_the_MOS_Transistor (13 minutes and 40 seconds)

• Chapter 3：CMOS_Processes (7 minutes and 31 seconds)

• Chapter 4：Semiconductors__Part_1 (14 minutes and 8 seconds)

• Chapter 5：Semiconductors__Part_2 (10 minutes and 59 seconds)

• Chapter 6：Semiconductors__Part_3 (7 minutes and 2 seconds)

• Chapter 7：Conduction Part 1 (10 minutes and 54 seconds)

• Chapter 8：Conduction Part 2 (6 minutes and 58 seconds)

• Chapter 9：Contact_Potentials (8 minutes and 54 seconds)

• Chapter 10：pn_Junctions_–_Zero_and_Forward_Bias (9 minutes and 20 seconds)

• Chapter 11：pn_Junctions_–Under_Reverse_Bias_–_Part_1 (10 minutes and 58 seconds)

• Chapter 12：pn_Junctions_–Under_Reverse_Bias_–_Part_2 (8 minutes and 43 seconds)

• Chapter 13：The_TwoTerminal_MOS_Structure_–_Flatband_Voltage (10 minutes and 22 seconds)

• Chapter 14：The_TwoTerminal_MOS_Structure_–_Surface_Condition (14 minutes and 34 seconds)

• Chapter 15：The_TwoTerminal_MOS_Structure_–_General_Analysis (13 minutes and 6 seconds)

• Chapter 16：The_TwoTerminal_MOS_Structure_–_Inversion (11 minutes and 15 seconds)

• Chapter 17：The_TwoTerminal_MOS_Structure_–_Strong_Inversion (6 minutes and 36 seconds)

• Chapter 18：The_TwoTerminal_MOS_Structure_–_Weak_Inversion (9 minutes and 41 seconds)

• Chapter 19：The_TwoTerminal_MOS_Structure_–_SmallSignal_Capacitance (13 minutes and 36 seconds)

• Chapter 20：The_ThreeTerminal_MOS_Structure_–_Part_1 (14 minutes and 32 seconds)

• Chapter 21：The_ThreeTerminal_MOS_Structure_–_Part_2 (17 minutes and 39 seconds)

• Chapter 22：Introduction (15 minutes and 33 seconds)

• Chapter 23：Complete_AllRegion_Model (14 minutes and 34 seconds)

• Chapter 24：Simplified_AllRegion_Models (11 minutes and 7 seconds)

• Chapter 25：Strong_Inversion_Models_–_1 (10 minutes and 35 seconds)

• Chapter 26：Strong_Inversion_Models_–_2 (1 minutes and 57 seconds)

• Chapter 27：Strong_Inversion_Models (15 minutes and 12 seconds)

• Chapter 28：Weak_Inversion_Models (13 minutes and 48 seconds)

• Chapter 29：Source_Reference_vs._Body_Reference (6 minutes and 41 seconds)

• Chapter 30：Effective_Mobility (20 minutes and 53 seconds)

• Chapter 31：Additional_Topics (19 minutes and 38 seconds)

• Chapter 32：SmallDimension_Effects__Velocity_Saturation (18 minutes and 53 seconds)

• Chapter 33：SmallDimension_Effects_–_Channel_Length_Modulation (15 minutes and 43 seconds)

• Chapter 34：SmallDimension_Effects__Charge_Sharing (25 minutes and 32 seconds)

• Chapter 35：SmallDimension_Effects_–_DrainInduced_Barrier_Lowering (13 minutes and 30 seconds)

• Chapter 36：SmallDimension_Effects_–_Combining_Several_Effects_Into_One_Model (7 minutes and 19 seconds)

• Chapter 37：SmallDimension_Effects_–_Hot_Carrier_Effects (13 minutes and 29 seconds)

• Chapter 38：SmallDimension_Effects__Velocity_Overshoot_and_Ballistic_Operation (6 minutes and 52 seconds)

• Chapter 39：SmallDimension_Effects__Polysilicon_Depletion (14 minutes and 16 seconds)

• Chapter 40：SmallDimension_Effects__QuantumMechanical_Effects;_Gate_Current (16 minutes and 17 seconds)

• Chapter 41：SmallDimension_Effects_–_Junction_Leakage (11 minutes and 31 seconds)

• Chapter 42：SmallDimension_Effects__Scaling_and_New_Technologies (9 minutes and 47 seconds)

• Chapter 43：Modeling_for_Circuit_Simulation_–_Approaches_and_Properties_of_Good_Models (11 minutes and 52 seconds)

• Chapter 44：Modeling_for_Circuit_Simulation_–_Model_Formulation_Considerations (6 minutes and 48 seconds)

• Chapter 45：Modeling_for_Circuit_Simulation_–_Parameter_Extraction_1 (9 minutes and 5 seconds)

• Chapter 46：Modeling_for_Circuit_Simulation_–_Parameter_Extraction_2 (16 minutes and 21 seconds)

• Chapter 47：Modeling_for_Circuit_Simulation_–_Representative_Compact_Models (5 minutes and 14 seconds)

• Chapter 48：Modeling_for_Circuit_Simulation_–_Benchmark_Tests (4 minutes and 48 seconds)

• Chapter 49：LargeSignal_Dynamic_Operation_–_QuasiStatic_Operation (10 minutes and 4 seconds)

• Chapter 50：LargeSignal_Dynamic_Operation_–_Terminal_Currents_in_QS_Operation (10 minutes and 52 seconds)

• Chapter 51：LargeSignal_Dynamic_Operation_–_Charging_Currents_in_QS_Operation (4 minutes and 30 seconds)

• Chapter 52：LargeSignal_Dynamic_Operation_–_Evaluation_of_Charges (9 minutes and 23 seconds)

• Chapter 53：LargeSignal_Dynamic_Operation_–_Transit_Time (5 minutes and 22 seconds)

• Chapter 54：LargeSignal_Dynamic_Operation_–_Transient_Response_Using_QS_Modeling (13 minutes and 1 seconds)

• Chapter 55：LargeSignal_Dynamic_Operation_–_NonQuasiStatic_Operation (13 minutes and 47 seconds)

• Chapter 56：LargeSignal_Dynamic_Operation_–_Extrinsic_Parasitics (9 minutes and 38 seconds)

• Chapter 57：SmallSignal_Modeling_–_Conductance_Parameter_Definitions_and_Equivalent_C (11 minutes and 11 seconds)

• Chapter 58：SmallSignal_Modeling_–_Conductance_Parameters_Due_to_Gate_and_Body_Leakag (6 minutes and 58 seconds)

• Chapter 59：SmallSignal_Modeling_–Transconductance (19 minutes and 30 seconds)

• Chapter 60：SmallSignal_Modeling_–_SourceDrain_and_Output_Conductance (16 minutes and 42 seconds)

• Chapter 61：SmallSignal_Modeling_–_Capacitance_Definitions_and_Equivalent_Circuits (8 minutes and 28 seconds)

• Chapter 62：SmallSignal_Modeling_–_Capacitance_Evaluation_and_Properties (20 minutes and 42 seconds)

• Chapter 63：SmallSignal_Modeling_–_Complete_Capacitance_Parameter_Set (11 minutes and 20 seconds)

• Chapter 64：SmallSignal_Modeling_–_Complete_QuasiStatic_Model (14 minutes and 45 seconds)

• Chapter 65：SmallSignal_Modeling_–_yParameter_Model (11 minutes and 53 seconds)

• Chapter 66：SmallSignal_Modeling_–_NonQuasiStatic_Model (15 minutes and 9 seconds)

• Chapter 67：SmallSignal_Modeling_–_Model_Comparison (9 minutes and 37 seconds)

• Chapter 68：SmallSignal_Modeling_–_RF_Models (12 minutes and 17 seconds)

• Chapter 69：Noise__Introduction (7 minutes and 35 seconds)

• Chapter 70：Noise__Thermal_Noise (16 minutes and 58 seconds)

• Chapter 71：Noise__HighFrequency_Considerations (5 minutes and 3 seconds)

• Chapter 72：Noise__Flicker_Noise (12 minutes and 57 seconds)

• Chapter 73：Ion_Implantation_–_Threshold_Adjust_Implant (19 minutes and 17 seconds)

• Chapter 74：Halo_Implants (6 minutes and 57 seconds)

• Chapter 75：Well_Proximity_Effect (4 minutes and 23 seconds)

• Chapter 76：Stress_Effects (4 minutes and 23 seconds)

• Chapter 77：Statistical_Variability (22 minutes and 13 seconds)

• Chapter 78：Epilogue (1 minutes and 49 seconds)