Live replay: Nexperia’s high-power GaN FETs enable a new generation of efficient power supply designs

Power conversion efficiency is an important factor promoting the development of power electronics. It is not only a key challenge for the industry, but also a driving force for innovation. Gallium nitride field effect transistors have extremely low switching quality factors and very fast switching transitions, achieving low loss and high-efficiency power conversion at high switching frequencies. They can achieve smaller, faster, and heat dissipation at lower system costs. A better performing, lighter system. Nexperia uses Cascode GaN in a cascade structure, an industry-standard driver compatible with traditional Si-FET, and the drive circuit design is very simple. Using proven SMD CCPAK copper clip packaging technology, it delivers industry-leading performance in a truly innovative package, while offering both top-cooling and traditional bottom-cooling designs to increase design flexibility and further enhance thermal capabilities.

• Chapter 1：High-power GaN FETs enable next-generation efficient power supply designs (58 minutes and 5 seconds)