1700V: A new voltage benchmark for GaN

Gallium nitride is a disruptive technology. Not only is it superior to silicon carbide in performance, it is also cheaper to manufacture because it does not require high-temperature processing, so the equipment required is cheaper and the electricity bill for the foundry is lower. The weakness of gallium nitride is its low voltage resistance, which limits the technology to consumer products and mains applications such as mobile phone chargers, TVs and home appliance bias power supplies. Power Integrations is accelerating research and development to replace silicon carbide with high-voltage gallium nitride. In recent years, it has released products based on 750V, 900V and 1250V gallium nitride, while continuing to work on the development of higher voltage products.

• Chapter 1：1. InnoMux2-EP product series provides multi-output power solutions for consumer electronics, commercial and industrial applications (10 minutes and 23 seconds)

• Chapter 2：2. InnoMux-2 single-stage architecture greatly improves multi-channel output efficiency (16 minutes and 19 seconds)

• Chapter 3：3. 650V Silicon Switch-1700V PowiGaN Option (17 minutes and 29 seconds)