H-bridge drive circuit designed based on IR2104 half-bridge drive circuit and IR7843 160A 30V ultra-low internal resistance NMOS tube, with forward and reverse indication, with enable pin IR2104 can be powered independently
It can increase the driving voltage of MOS and reduce the internal resistance. It can still work normally at 600KHz. IR2104 can be replaced with EG2104. It can achieve pin-to-pin compatibility and stronger driving capability. v1.1 has modified a few errors on the original basis and made fine adjustments. silk screen layout
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