| Part Number | Manufacturer | Description | Datasheet |
|---|---|---|---|
| BL24C16A-SFRC | Shanghai Belling | Memory interface type: I2C Memory capacity: 16Kb (2K x 8) Operating voltage: 1.7V ~ 5.5V Memory type: Non-Volatile 16-Kbit (2K x 8bit), I2C interface, 1.7V to 5.5V, -40~+ 85℃. | download |
| BL24C04A | Shanghai Belling | Memory interface type: 2-Wire Memory capacity: 4Kb (512 x 8) Operating voltage: 1.7V ~ 5.5V Memory type: Non-Volatile | download |
| BL24C08F-PATC | Shanghai Belling | Memory interface type: I2C Memory capacity: 8Kb (1K x 8) Operating voltage: 1.7V ~ 5.5V Memory type: Non-Volatile EEPROM storage | download |
| BL24C02ADATC | Shanghai Belling | Memory interface type: I2C Memory capacity: 2Kb (256 x 8) Operating voltage: 1.7V ~ 5.5V Memory type: Non-Volatile EEPROM storage | download |
| BL24C02P-RRRC | Shanghai Belling | Memory interface type: I2C Memory capacity: 2Kb (256 x 8) Operating voltage: 1.7V ~ 5.5V Memory type: Non-Volatile EEPROM storage | download |
| TMP89FM42UG(ZHZ) | Toshiba Semiconductor | --- | download |
| THGBMHG8C2LBAIL | Toshiba Semiconductor | Technology: NAND Flash Clock Frequency: - Memory Architecture (Format): FLASH Memory Interface Type: MMC Memory Capacity: 256Gb (32G x 8) Memory Type: Non-Volatile eMMC 32GB | download |
| TMP86FH46BNG(Z) | Toshiba Semiconductor | --- | download |
| TC58NVG0S3HTA00 | Toshiba Semiconductor | SLC NAND 1Gb | download |
| TMP86FH09ANG(G,ZHZ | Toshiba Semiconductor | --- | download |
| TMP86F809NG(CZHZ) | Toshiba Semiconductor | --- | download |
| TC58NVG2S0HTA00 | Toshiba Semiconductor | --- | download |
| TC58NYG0S3HBAI6 | Toshiba Semiconductor | --- | download |
| TC58BVG0S3HTA00 | Toshiba Semiconductor | Memory interface type: Parallel Memory capacity: 1Gb (128M x 8) Operating voltage: 2.7V ~ 3.6V Memory type: Non-Volatile BENAND (Built-in ECC | download |
| 5045P | Xicon Passive Components | Memory interface type: SPI Memory capacity: 4Kb (512 x 8) Operating voltage: 2.7V ~ 5.5V Memory type: Non-Volatile monitoring chip with 4K SPI EEPROM, threshold voltage = 4.5V to 5.5V | download |
| SST25VF010A-33-4C-SAE | SST | Memory architecture (format): FLASH Memory interface type: SPI Memory capacity: 1Mb (128K x 8) Memory type: Non-Volatile | download |
| SST26VF016B-104I/SM | SST | Memory architecture (format): FLASH Memory interface type: SPI - Quad I/O Memory capacity: 16Mb (2M x 8) Memory type: Non-Volatile 3.0V 16 Mbit Serial Quad I/O (SQI) Flash Memory | download |
| BY25D16ASTIG(T) | Zhuhai BOYA Technology Co., Ltd. | 16Mbit | download |
| BY25Q128ASSIG(T) | Zhuhai BOYA Technology Co., Ltd. | --- | download |
| BY25D80ASSIG | Zhuhai BOYA Technology Co., Ltd. | --- | download |
| BY25D80ASTIG | Zhuhai BOYA Technology Co., Ltd. | Memory type: Non-Volatile Memory architecture (format): FLASH Clock frequency: 108MHz Technology: NOR Flash Memory interface type: SPI Memory capacity: 8M 8M BIT SPI NOR FLASH | download |
| FT24C02A-KSR-T | Fremont Micro Devices Corporation | Memory interface type: I2C Memory capacity: 2Kb (256 x 8) Operating voltage: 1.8V ~ 5.5V Memory type: Non-Volatile I2C interface two-wire serial | download |
| FT24C64A-ETR-T | Fremont Micro Devices Corporation | Memory interface type: I2C Memory capacity: 64Kb (8K x 8) Operating voltage: 1.8V ~ 5.5V Memory type: Non-Volatile 64-Kbit (8 x 8bit), I2C interface, operating voltage: 1.8V to 5.5V | download |
| FT24C128A-ESR-T | Fremont Micro Devices Corporation | --- | download |
| FT24C32A-ESR-T | Fremont Micro Devices Corporation | Memory interface type: I2C Memory capacity: 32Kb (4K x 8) Operating voltage: 1.8V ~ 5.5V Memory type: Non-Volatile 32-Kbit (4 x 8bit), I2C interface, operating voltage: 1.8V to 5.5V | download |
| FT24C04A-KSR-T | Fremont Micro Devices Corporation | Memory interface type: I2C Memory capacity: 4Kb (512 x 8) Operating voltage: 1.8V ~ 5.5V Memory type: Non-Volatile 4-Kbit (518 x 8bit), I2C interface, operating voltage: 1.8V to 5.5V | download |
| FT24C64A-ETR-B | Fremont Micro Devices Corporation | --- | download |
| FT24C32A-ESR-B | Fremont Micro Devices Corporation | --- | download |
| BR24T08FJ-WE2 | ROHM Semiconductor | Memory interface type: I2C Memory capacity: 8Kb (1K x 8) Operating voltage: 1.6V ~ 5.5V Memory type: Non-Volatile | download |
| K9F1G08UOC-PCBO | SAMSUNG | Memory architecture (format): FLASH Memory interface type: Parallel Memory capacity: 1Gb (128M x 8) Memory type: Non-Volatile 1-Gbit (128M x 8bit), operating voltage: 3.3V | download |
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